丝印：S12A45S；Package：POWERDI5；12A SBR® SUPER BARRIER RECTIFIER POWERDI®

Features Designed as Bypass Diodes for Solar Panels Selectively Rated for +200°C Maximum Junction Temperature for High Thermal Reliability Patented Super Barrier Rectifier Technology Low Forward Voltage Drop Excellent High Temperature Stability Lead Free Finish, RoHS Compliant (Notes 1 & 2)

文件：561.87 Kbytes 页数：5 Pages

DIODES

美台半导体

12A SBR SUPER BARRIER RECTIFIER POWERDI5

Features 100 Avalanche Tested Patented SBR Technology Provides a Superior Avalanche Capability Than Schottky Diodes Ensuring More Rugged and Reliable End Applications Reduced Ultra-low Forward Voltage Drop (VF); Better Efficiency and Cooler Operation Reduced High Temperature Reverse Leakage

文件：682.42 Kbytes 页数：6 Pages

DIODES

美台半导体

丝印：S12U100；Package：PowerDI5；12A SBR SUPER BARRIER RECTIFIER POWERDI5

Features 100 Avalanche Tested Patented SBR Technology Provides a Superior Avalanche Capability Than Schottky Diodes Ensuring More Rugged and Reliable End Applications Reduced Ultra-low Forward Voltage Drop (VF); Better Efficiency and Cooler Operation Reduced High Temperature Reverse Leakage

文件：682.42 Kbytes 页数：6 Pages

DIODES

美台半导体

丝印：S12U100；Package：PowerDI5；12A SBR SUPER BARRIER RECTIFIER POWERDI5

Features 100 Avalanche Tested Patented SBR Technology Provides a Superior Avalanche Capability Than Schottky Diodes Ensuring More Rugged and Reliable End Applications Reduced Ultra-low Forward Voltage Drop (VF); Better Efficiency and Cooler Operation Reduced High Temperature Reverse Leakage

文件：682.42 Kbytes 页数：6 Pages

DIODES

美台半导体

12A SBR® SUPER BARRIER RECTIFIER POWERDI®5SP-B

Features Designed as bypass diodes for solar panels Low profile height (0.75mm) and 7.6mm protruding leads, enabling the package to be integrated within the solar glass panel Selectively rated for +200°C maximum junction temperature for high thermal reliability and excellent high temperature

文件：251.5 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：12U45LH1；Package：POWERDI5SP；12A SBR® SUPER BARRIER RECTIFIER POWERDI®5SP-B

Features Designed as bypass diodes for solar panels Low profile height (0.75mm) and 7.6mm protruding leads, enabling the package to be integrated within the solar glass panel Selectively rated for +200°C maximum junction temperature for high thermal reliability and excellent high temperature

文件：251.5 Kbytes 页数：5 Pages

DIODES

美台半导体

STANDARD SHAFT SEALS

DESCRIPTION The SBR profile is a shaft seal composed of a single external metal cage with a rubber coating on the inside and the end of the cage, and a primary sealing lip with integrated spring. APPLICATIONS Shaft sealing Engines Pumps Transmissions

文件：305.55 Kbytes 页数：5 Pages

FRANCEJOINT

High Voltage Fast-Switching NPN Power Transistor

General Description This devices is designed for high voltage, high speed switching characteristic required such as lighting system, switching regulator, inverter and deflection circuit. Features - Very High Switching Speed (Typical 120ns@1.0A) - Minimum Lot-to-Lot hFE Variation - Low VCE(sat

文件：713.87 Kbytes 页数：6 Pages

semiWell

矽门微

High Voltage Fast-Switching NPN Power Transistor

General Description This devices is designed for high voltage, high speed switching characteristic required such as lighting system, switching regulator, inverter and deflection circuit. Features ◆ Very High Switching Speed (Typical 120ns@1.0A) ◆ Minimum Lot-to-Lot hFE Variation ◆ Low VCE(sat

文件：461.06 Kbytes 页数：5 Pages

semiWell

矽门微

High Voltage Fast -Switching NPN Power Transistor

General Description This Device is designed for high voltage ,High speed switching characteristics required such as lighting system,switching mode power supply. Features ■ Very High Switching Speed ■ High Voltage Capability ■ Wide Reverse Bias SOA

文件：264.94 Kbytes 页数：5 Pages

WinsemiShenzhen Wenxian Microelectronics Co., Ltd

稳先微电子深圳市稳先微电子有限公司