丝印：SBR20B100CT；Package：TO220AB；20A SBR® SUPER BARRIER RECTIFIER

Features Patented SBR technology provides superior avalanche capability versus Schottky diodes, ensuring more rugged and reliable end applications. Reduced ultra-low forward voltage drop (VF); Better efficiency and cooler operation. Reduced high-temperature reverse leakage; Increased reliabi

文件：489.89 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：SBR20E100CT；Package：TO220AB；20A SBR® SUPER BARRIER RECTIFIER

Features  Patented SBR technology provides superior avalanche capability versus Schottky diodes, ensuring more rugged and reliable end applications.  Reduced ultra-low forward voltage drop (VF); Better efficiency and cooler operation.  Reduced high temperature reverse leakage; Increased

文件：389.31 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：SBR20E120CT；Package：TO220AB；20A SBR® SUPER BARRIER RECTIFIER

Features  Patented SBR technology provides superior avalanche capability versus Schottky diodes, ensuring more rugged and reliable end applications.  Reduced ultra-low forward voltage drop (VF); Better efficiency and cooler operation.  Reduced high temperature reverse leakage; Increased r

文件：491.83 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：SBR20M150；Package：TO252；20A SBR SUPER BARRIER RECTIFIER

Description Super Barrier Rectifier (SBR®) is a proprietary and patented Diodes Incorporated technology that utilizes a Metal Oxide Semiconductor MOS) manufacturing process to create a superior alternative to the Schottky diode. This Super Barrier Rectifier (SBR) diode has been designed to me

文件：382.93 Kbytes 页数：5 Pages

DIODES

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丝印：SBR20U50S；Package：PowerDI5060-8；20A SBR SUPER BARRIER RECTIFIER PowerDI5060-8

Features Patented SBR® Technology Provides Superior Avalanche Capability Versus Schottky Diodes, Ensuring More Rugged and Reliable End Applications Reduced Ultra-Low Forward Voltage Drop (VF); Better Efficiency and Cooler Operation Reduced High Temperature Reverse Leakage; Increased Reliabi

文件：551.68 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：SBR30A100CTE；Package：TO-262；30A SBR® SUPER BARRIER RECTIFIER

Features Low Forward Voltage Drop Excellent High Temperature Stability Patented Super Barrier Rectifier Technology Soft, Fast Switching Capability Lead Free Finish, RoHS Compliant (Note 2) Also Available in Green Molding Compound (Note 4)

文件：76.75 Kbytes 页数：3 Pages

DIODES

美台半导体

丝印：SBR30A100CTE；Package：TO-262；30A SBR® SUPER BARRIER RECTIFIER

Features Low Forward Voltage Drop Excellent High Temperature Stability Patented Super Barrier Rectifier Technology Soft, Fast Switching Capability Lead Free Finish, RoHS Compliant (Note 2) Also Available in Green Molding Compound (Note 4)

文件：76.75 Kbytes 页数：3 Pages

DIODES

美台半导体

丝印：SBR30A45CTB；Package：TO263；30A SBR® SUPER BARRIER RECTIFIER

Features 100 Avalanche tested Patented SBR technology provides a superior avalanche capability than schottky diodes ensuring more rugged and reliable end applications. Reduced ultra-low forward voltage drop (VF); better efficiency and cooler operation. Reduced high temperature reverse leaka

文件：260.11 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：SBR30E100CT；Package：TO-220AB；30A SBR SUPER BARRIER RECTIFIER

Features Patented SBR ® Technology Provides Superior Avalanche Capability Versus Schottky Diodes, Ensuring More Rugged and Reliable End Applications. Reduced Ultra-Low Forward Voltage Drop (VF); Better Efficiency and Cooler Operation. Reduced High-Temperature Reverse Leakage; Increased Re

文件：510.59 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：SBR40U100CT；Package：TO-220AB；40A SBR® SUPER BARRIER RECTIFIER

Features • Ultra Low Forward Voltage Drop • Excellent High Temperature Stability • Patented Super Barrier Rectifier Technology • Soft, Fast Switching Capability • 150ºC Operating Junction Temperature • Lead Free Finish, RoHS Compliant (Note 2) • Also Available in Green Molding Compound (Not

文件：101.95 Kbytes 页数：3 Pages

DIODES

美台半导体