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F7341

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRFInternational Rectifier

英飞凌英飞凌科技公司

ICM7341

SINGLE12/10/8-BITVOLTAGE-OUTPUTDACS

ICMICIC MICROSYSTEMS

集成电路微系统股份有限公司

ICM7341M

SINGLE12/10/8-BITVOLTAGE-OUTPUTDACS

ICMICIC MICROSYSTEMS

集成电路微系统股份有限公司

ICM7341MG

SINGLE12/10/8-BITVOLTAGE-OUTPUTDACS

ICMICIC MICROSYSTEMS

集成电路微系统股份有限公司

ICM7341S

SINGLE12/10/8-BITVOLTAGE-OUTPUTDACS

ICMICIC MICROSYSTEMS

集成电路微系统股份有限公司

ICM7341SG

SINGLE12/10/8-BITVOLTAGE-OUTPUTDACS

ICMICIC MICROSYSTEMS

集成电路微系统股份有限公司

ICM7341T

SINGLE12/10/8-BITVOLTAGE-OUTPUTDACS

ICMICIC MICROSYSTEMS

集成电路微系统股份有限公司

IRF7341

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF7341

GenerationVTechnology

TheSOP-8hasbeenmodifiedthroughacustomized leadframeforenhancedthermalcharacteristicsand multiple-diecapabilitymakingitidealinavarietyof powerapplications.Withtheseimprovements,multiple devicescanbeusedinanapplicationwithdramatically reducedboardspace.Thepa

UMWUMW

友台友台半导体

IRF7341GPBF

HEXFET짰PowerMOSFET

Description TheseHEXFET®PowerMOSFET’sinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFET’sarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepe

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF7341GTRPbF

HEXFET짰PowerMOSFET

Description TheseHEXFET®PowerMOSFET’sinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFET’sarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepe

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF7341IPBF

HEXFETPowerMOSFET

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF7341PBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieve extremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedand ruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF7341PBF

GenerationVTechnology

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF7341Q

HEXFETPowerMOSFET

Description SpecificallydesignedforAutomotiveapplications,theseHEXFET®PowerMOSFET’sinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseAutomotivequalifiedHEXFETPowerMOSFET’sarea17

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF7341QPBF

AdvancedProcessTechnology

Description TheseHEXFET®PowerMOSFET’sinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFET’sarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepe

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF7341QPBF

HEXFET짰PowerMOSFET

Description TheseHEXFET®PowerMOSFET’sinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFET’sarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepe

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF7341QTRPBF

AdvancedProcessTechnology

Description TheseHEXFET®PowerMOSFET’sinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFET’sarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepe

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF7341TR

GenerationVTechnology

TheSOP-8hasbeenmodifiedthroughacustomized leadframeforenhancedthermalcharacteristicsand multiple-diecapabilitymakingitidealinavarietyof powerapplications.Withtheseimprovements,multiple devicescanbeusedinanapplicationwithdramatically reducedboardspace.Thepa

UMWUMW

友台友台半导体

IRF7341TR

HEXFET짰PowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRFInternational Rectifier

英飞凌英飞凌科技公司

详细参数

  • 型号:

    SAA7341GP

  • 制造商:

    PHILIPS

  • 制造商全称:

    NXP Semiconductors

  • 功能描述:

    COMS Digital decoding IC for Compact Disc

供应商型号品牌批号封装库存备注价格
PHILIPS/飞利浦
2024+实力库存
QFP
3520
只做原厂渠道 可追溯货源
询价
PHILIPS
23+
QFP
3700
绝对全新原装!现货!特价!请放心订购!
询价
3000
自己现货
询价
PHILIPS
23+
QFP
12300
询价
PHILPS
96+
QFP
180
原装现货海量库存欢迎咨询
询价
PHI
22+
QFP80
3629
原装优势!房间现货!欢迎来电!
询价
PHILIPS
22+23+
QFP
39481
绝对原装正品全新进口深圳现货
询价
PHILIPS
18+
QFP80
85600
保证进口原装可开17%增值税发票
询价
QFP
1356
100%原装正品!现货热价热卖!可开17%增值税票!
询价
23+
N/A
85300
正品授权货源可靠
询价
更多SAA7341GP供应商 更新时间2024-5-21 9:24:00