HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：134.99 Kbytes 页数：7 Pages

IRF

Low Power Consumption LDO

Features • Ultra low quiescent current: 3.5µA (typ.) • High input voltage (up to 12V) • Output voltage: 1.8V, 2.5V, 2.7V, 3.0V, 3.3V, 3.5V, 4.15V, 5.0V • Output voltage accuracy: tolerance ±3% • Maximum output current: 250mA • Low dropout voltage • Low temperature coefficient • 3-pin

文件：335.98 Kbytes 页数：8 Pages

HOLTEK

合泰

SINGLE 12/10/8-BIT VOLTAGE-OUTPUT DACS

文件：167.59 Kbytes 页数：9 Pages

ICMIC

SINGLE 12/10/8-BIT VOLTAGE-OUTPUT DACS

文件：167.59 Kbytes 页数：9 Pages

ICMIC