丝印：J3；Package：SOT-23；TRANSISTOR (NPN)

FEATURES High Collector Current. Complementartyo S9012. ExcellenhtF E Linearity.

文件：856.2 Kbytes 页数：4 Pages

SY

顺烨电子

NPN EPITAXIAL PLANAR TRANSISTOR

Description The S9013 is designed for use in 1W output amplifier of portable radios in class B push-pull operation. Features •High Total Power Dissipation. (PT:625mW) •High Collector Current. (IC:500mA) • Complementary to S9012 • Excellent linearity.

文件：52.23 Kbytes 页数：3 Pages

TGS

丝印：J3；Package：SOT-23；NPN Silicon Epitaxial Planar Transistor

FEATURES ● High Collector Current.(IC= 500mA). ● Complementary To S9012. ● Excellent HFE Linearity. ● Power dissipation.(PC=300mW). APPLICATIONS ● High Collector Current.

文件：1.57906 Mbytes 页数：3 Pages

LUGUANG

鲁光电子

NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As complementary type the PNP transistor 9012

文件：328.1 Kbytes 页数：2 Pages

DGNJDZ

南晶电子

TRANSISTOR (NPN)

FEATURE Power dissipation PCM: 0.625 W (Tamb=25℃) Collector current ICM: 0.5 A Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range Tj, Tstg: -55℃ to +150℃

文件：126.45 Kbytes 页数：1 Pages

WINNERJOIN

永而佳

NPN Silicon Epitaxial Planar Transistor

FEATURES ● High Collector Current.(IC= 500mA） ● Complementary To S9012. ● Excellent HFE Linearity. ● Power dissipation.(PC=300mW) APPLICATIONS ● High Collector Current.

文件：304.68 Kbytes 页数：4 Pages

DSK

Power dissipation

FEATURE Power dissipation PCM: 0.3 W (Tamb=25℃) Collector current ICM: 0.5 A Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range Tj, Tstg: -55℃ to +150℃

文件：525.83 Kbytes 页数：2 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：J3；Package：SOT-23；TRANSISTOR(NPN)

FEATURES Complementary to S9012 Excellent hFE linearity

文件：438.76 Kbytes 页数：3 Pages

GWSEMI

唯圣电子

丝印：J3；Package：SOT-23；NPN Transistors

Features ● Excellent hFE linearity ● Collector Current :IC=0.5A

文件：534.18 Kbytes 页数：3 Pages

YFWDIODE

佑风微

Plastic-Encapsulate Transistors

Plastic-Encapsulate Transistors FEATURES Complimentary to S9012

文件：167.81 Kbytes 页数：2 Pages

HOTTECH

合科泰