1W Output Amplifier of Potable Radios in Class B Push-pull Operation.

1W Output Amplifier of Potable Radios in Class B Push-pull Operation. • High total power dissipation. (PT=625mW) • High Collector Current. (IC=500mA) • Complementary to SS9012 • Excellent hFE linearity.

文件：40.08 Kbytes 页数：4 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

NPN SILICON EPITAXIAL PLANAR TRANSISTOR

Features • High Collector Current.(IC= 500mA） • Complementary To S9012. • Excellent HFE Linearity. • Power dissipation.(PC=300mW)

文件：752.25 Kbytes 页数：3 Pages

SUNMATE

森美特

丝印：J3；Package：SOT-23；NPN Silicon Epitaxial Planar Transistor

FEATURES ● High Collector Current.(IC= 500mA） ● Complementary To S9012. ● Excellent HFELinearity. ● Power dissipation.(PC=300mW) APPLICATIONS ● High Collector Current.

文件：230.77 Kbytes 页数：4 Pages

BILIN

银河微电

TO-92 Plastic-Encapsulate Transistors

FEATURE Complementary to S9012 Excellent hFE linearity

文件：124.21 Kbytes 页数：2 Pages

DAYA

大亚电器

TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

Description Designed for use in 1W output amplifier of portable radios in class B push-pull operation.

文件：275.84 Kbytes 页数：2 Pages

DCCOM

道全

PLASTIC ENCAPSULATE TRANSISTORS

[SHENZHEN SLS TECHNOLOGY CO.,LTD.] Features: PC and IC are larger, hFE linearity is good; Applications: Used in power amplifier circuit, complementary to S9012.

文件：963.59 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

TRANSISTOR(NPN)

TRANSISTOR (NPN) FEATURES ● Complementary to S9012 ● Excellent hFE linearity

文件：593.19 Kbytes 页数：2 Pages

HTSEMI

金誉半导体

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High Collector Current. ● Complementary to S9012. ● Excellent hFE Linearity.

文件：815.52 Kbytes 页数：4 Pages

JIANGSU

长电科技

丝印：J3；Package：SOT-23；NPN Silicon Epitaxial Planar Transistor

FEATURES ● High Collector Current.(IC= 500mA） ● Complementary To S9012. ● Excellent HFE Linearity. ● Power dissipation.(PC=300mW) APPLICATIONS ● High Collector Current.

文件：588.94 Kbytes 页数：4 Pages

LEIDITECH

雷卯电子

General Purpose Transistor

FEATURES Power dissipation PCM : 0.3 W Collector Current ICM : 0.5 A Collector-base voltage V(BR)CBO : 40 V Operating & storage junction temperature Tj, Tstg : - 55°C ~ + 150°C

文件：349.4 Kbytes 页数：1 Pages

SECOS

喜可士