NPN Epitaxial Silicon Transistor

FEATURE Power dissipation PCM : 0.625 W Tamb=25 °C Collector current ICM: 0.5 A Collector-base voltage V(BR)CBO : 40 V Operating and storage junction temperature range Tj, Tstg: -55 to +150 °C

文件：101.62 Kbytes 页数：2 Pages

SECOS

喜可士

丝印：J3；Package：SOT-223；SOT-323 Plastic-Encapsulate Transistors

FEATURES High Collector Current Excellent HFE Linearity

文件：1.74811 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

NPN Silicon Epitaxial Planar Transistor

FEATURES ● High Collector Current.(IC= 500mA） ● Complementary To S9012. ● Excellent HFE Linearity. ● Power dissipation.(PT=200mW) APPLICATIONS ● High Collector Current.

文件：313.64 Kbytes 页数：4 Pages

DSK

NPN Silicon Epitaxial Planar Transistor

FEATURES ● High Collector Current.(IC= 500mA） ● Complementary To S9012. ● Excellent HFE Linearity. ● Power dissipation.(PT=200mW) APPLICATIONS ● High Collector Current.

文件：197.51 Kbytes 页数：4 Pages

BILIN

银河微电

TRANSISTOR(NPN)

FEATURES ● High Collector Current ● Excellent HFE Linearity

文件：436.98 Kbytes 页数：1 Pages

HTSEMI

金誉半导体

SOT-323 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High Collector Current ● Excellent HFE Linearity

文件：759.76 Kbytes 页数：3 Pages

JIANGSU

长电科技

0.5A , 40V NPN Plastic Encapsulated Transistor

FEATURES ● High Collector Current ● Excellent HFE Linearity

文件：59.79 Kbytes 页数：1 Pages

SECOS

喜可士

SOT-323 Plastic-Encapsulate Transistors

TRANSISTOR( NPN ) Features ● High Collector Current ● Excellent HFE Linearity

文件：2.31626 Mbytes 页数：3 Pages

HDSEMI

海德半导体

NPN Plastic-Encapsulate Transistors

Mechanical Data • Case: SOT-23 Molded plastic • Epoxy: UL94V-O rate flame retardant • RoHS compliant package

文件：327.5 Kbytes 页数：4 Pages

BWTECH

丝印：J6；Package：SOT-23；SOT-23 Plastic-Encapsulate Transistors

FEATURES Complementary to S9015

文件：353.15 Kbytes 页数：3 Pages

UMW

友台半导体