TRANSISTOR (PNP)

FEATURES High total power dissipation.(PC=0.45W) High hFE and good linearity Complementary to S9014

文件：277.7 Kbytes 页数：2 Pages

PFS

平盛电子

Low Frequency, Low Noise Amplifier

FEATURES Power dissipation PCM : 0.2 W Collector Current ICM : -0.1 A Collector-base voltage V(BR)CBO : -50 V Operating & storage junction temperature Tj, Tstg : - 55℃ ~ + 150℃

文件：234.45 Kbytes 页数：2 Pages

SECOS

喜可士

丝印：M6；Package：SOT-23；TRANSISTOR (PNP)

FEATURES Complementary to S9014

文件：861.09 Kbytes 页数：4 Pages

SY

顺烨电子

PNP EPITAXIAL PLANAR TRANSISTOR

Description The S9015 is designed for use in pre-amplifier of low level and low noise. Features • High Total Power Dissipation. (PD:450mW) • Complementary to S9014 • High hFE and Good Linearity. Absolute Maximum Ratings • Maximum Temperatures Storage Temperature

文件：50.27 Kbytes 页数：3 Pages

TGS

TRANSISTOR (PNP)

FEATURES Complementary to S9014

文件：861.1 Kbytes 页数：4 Pages

SHUNYE

顺烨电子

TRANSISTOR (PNP)

FEATURES Power dissipation PCM: 0.45 W (Tamb=25℃) Collector current ICM: -0.1 A Collector-base voltage V(BR)CBO: -50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：150.66 Kbytes 页数：1 Pages

WINNERJOIN

永而佳

丝印：M6；Package：SOT-23；SOT-23 Plastic-Encapsulate Transistors

FEATURES Complementary to S9014

文件：286.57 Kbytes 页数：2 Pages

UMW

友台半导体

Low Frequency, Low Noise Amplifier

Low Frequency, Low Noise Amplifier • Complement to SS9014

文件：65.43 Kbytes 页数：4 Pages

FAIRCHILD

仙童半导体

PNP (LOW FREQUENCY, LOW NOISE AMPLIFIER)

LOW FREQUENCY, LOW NOISE AMPLIFIER • Complement to SS9014

文件：229.85 Kbytes 页数：6 Pages

SAMSUNG

三星

.050” [1.27 mm] Contact Centers, Male Headers, Straight/Right Angle/SMT

SPECIFICATIONS • Insulator Material: Nylon • Contact Material: Brass • Plating: Gold Flash Overall • 1 Amp current rating • UL Flammability Rating: 94V-0 • Stacker Options available - Consult factory

文件：467.62 Kbytes 页数：2 Pages

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