NPN General Purpose Transistors

NPN General Purpose Transistors P/b Lead(Pb) - Free

文件：788 Kbytes 页数：4 Pages

WEITRON

丝印：J6；Package：SOT-23；Silicon Epitaxial Planar Transistor

FEATURES • Complementary To S9015. • Excellent HFE Linearity. • Power dissipation.(PC=0.2W) APPLICATIONS • Per-Amplifier low level & low noise.

文件：183.94 Kbytes 页数：4 Pages

BILIN

银河微电

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES • High total power dissipation.(PC=0.45W) • High hFE and good linearity • Complementary to S9015

文件：123.61 Kbytes 页数：2 Pages

DAYA

大亚电器

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for use in pre-amplifier of low level and low noise.

文件：539.84 Kbytes 页数：2 Pages

DCCOM

道全

TRANSISTOR (NPN)

FEATURES • Complementary to S9015

文件：827.51 Kbytes 页数：2 Pages

HTSEMI

金誉半导体

TRANSISTOR (NPN)

FEATURES • High total power dissipation.(PC=0.45W) • High hFE and good linearity • Complementary to S9015

文件：184.47 Kbytes 页数：1 Pages

PFS

平盛电子

Low Level & Low Noise

FEATURES Power dissipation PCM : 0.2 W Collector Current ICM : 0.1 A Collector-base voltage V(BR)CBO : 50 V Operating & storage junction temperature Tj, Tstg : - 55°C ~ + 150°C

文件：259.39 Kbytes 页数：2 Pages

SECOS

喜可士

丝印：J6；Package：SOT-23；TRANSISTOR (NPN)

FEATURES Complementary to S9015

文件：876.26 Kbytes 页数：4 Pages

SY

顺烨电子

NPN EPITAXIAL PLANAR TRANSISTOR

Description The S9014 is designed for use in pre-amplifier of low level and low noise. Features • High Total Power Dissipation. (PD:450mW) • Complementary to S9015 • High hFE and Good Linearity.

文件：51.12 Kbytes 页数：3 Pages

TGS

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES • Complementary to S9015

文件：487.48 Kbytes 页数：2 Pages

DGNJDZ

南晶电子