Discrete SiC Schottky Diodes

SMC

桑德斯微电子

SiC Schottky Diode

Features Low leakage current (IR) Zero reverse recovery current Temperature independent switching behavior Positive temperature coefficient on VF High surge current capacity Low capacitive charge Applications Switch mode power supplies (SMPS) Uninterruptible power supplies Server/telec

文件：1.47481 Mbytes 页数：7 Pages

BASICSEMI

基本半导体

Silicon Carbide Schottky Diode

Features • Zero Forward/Reverse Recovery Current • High Blocking Voltage • High Frequency Operation • Positive Temperature Coefficient on VF • Temperature Independent Switching Behavior • 100% avalanche tested Benefits• Higher System Efficiency• Parallel Device Convenience withouttherma

文件：1.47535 Mbytes 页数：4 Pages

LUGUANG

鲁光电子

Silicon Carbide Schottky Diode

General Description This product family offers state of the art performance. It is designed for high frequency applications here high efficiency and high reliability are required. Features  Zero Forward/Reverse Recovery Current  High Blocking Voltage  High Frequency Operation  Positi

文件：1.7011 Mbytes 页数：5 Pages

LUGUANG

鲁光电子