丝印：LGE3D40065D；Package：TO-247-3；Silicon Carbide Schottky Diode

Features • Zero Forward/Reverse Recovery Current • High Blocking Voltage • High Frequency Operation • Positive Temperature Coefficient on VF • Temperature Independent Switching Behavior • 100% avalanche tested Benefits• Higher System Efficiency• Parallel Device Convenience withouttherma

文件：1.47535 Mbytes 页数：4 Pages

LUGUANG

鲁光电子

Silicon Carbide Schottky Diode

General Description This product family offers state of the art performance. It is designed for high frequency applications here high efficiency and high reliability are required. Features  Zero Forward/Reverse Recovery Current  High Blocking Voltage  High Frequency Operation  Positi

文件：1.7011 Mbytes 页数：5 Pages

LUGUANG

鲁光电子

Silicon Carbide Schottky Diode

Features  Low Forward Voltage Drop  High-Speed Switching  Positive Temperature Coefficient  Temperature-Independent Switching Behavior Applications  Power Factor Correction  Sever Mode Power Supplies  Uninterruptible Power Supply

文件：9.45752 Mbytes 页数：6 Pages

LUGUANG

鲁光电子

650V SIC POWER SCHOTTKY RECTIFIER

175°C TJ operation Ultra-low switching loss Switching speeds independent of operating temperature Low total conduction losses High forward surge current capability High package isolation voltage Terminals finish: 100% Pure Tin “-A” is an AEC-Q101 qualified device Pb − Free Device All

文件：523.02 Kbytes 页数：6 Pages

SMCDIODE

桑德斯微电子