SCHOTTKY BARRIER RECTIFIERS

文件：144.28 Kbytes 页数：2 Pages

MOSPEC

统懋

EMIPAK 1B PressFit Power Module 1200 V Silicon Carbide Single Phase Bridge, 30 A

FEATURES • SiC diode technology • Exposed Al2O3 substrate with low thermal resistance • Very high frequency operating • Low internal inductances • Qualified using AQG324 guideline as reference • PressFit pins locking technology PATENT(S): www.vishay.com/patents • Material categorization:

文件：440.23 Kbytes 页数：7 Pages

VISHAYVishay Siliconix

威世威世科技公司

Shorted AnodeTM IGBT

文件：646.77 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

30.0 Ampere Surface Mount Dual Series Connection Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

文件：321.11 Kbytes 页数：2 Pages

THINKISEMI

思祁半导体

thinQ!TM SiC Schot tky Diode

文件：753.63 Kbytes 页数：11 Pages

INFINEON

英飞凌