STANDARD RECOVERY HIGH VOLTAGE, HIGH CURRENT RECTIFIER

文件：131.72 Kbytes 页数：2 Pages

SEMTECH

先之科

SURFACE MOUNT RECTIFIER

VOLTAGE RANGE 50 TO 1000 Volts\nCURRENT 1.0 AmperesFEATURES\n• For surface mounted applications\n• High tempreature metallurgically bonded-no\n   compression contacts as found in other\n   diode-constructed rectifiers\n• Glass passivated junction\n• Built-in strain relief\n• Easy pick and place\n• P • For surface mounted applications\n• High tempreature metallurgically bonded-no\n   compression contacts as found in other\n   diode-constructed rectifiers\n• Glass passivated junction\n• Built-in strain relief\n• Easy pick and place\n• Plastic package has Underwrites Laboratory\n   Flamability Cla;

CHENG-YI

辰頤电子

Package：DO-214AC，SMA；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 800V 1A DO214AC

Taiwan Semiconductor Corporation

Package：DO-214AC，SMA；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 800V 1A SMA

SMCDIODE

桑德斯微电子

Package：DO-214AC，SMA；包装：卷带（TR）剪切带（CT）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 800V 1A SMA

ONSEMI

安森美半导体

Standard Cells

• Large scale integration (0.35 µm CMOS, using 3-, or 4-layer interconnect process, number of raw gates: 1,450,000 Max)\r\n• High-speed operation (Internal gate delay: 136ps/3.3V, 2-input power-NAND Typ.)\r\n• Selectable power supply voltage: Using single power supply: (2.0 V, 2.5 V, 3.3 V)\r\n• Usi;

Epson

爱普生

Standard Cells

• Large scale integration (0.18 µm CMOS, using 3-,4-,5-, or 6-layer interconnect process, number of raw gates: 7,300,000 Max.)\r\n• High-speed operation (Internal gate delay: 38.9ps/1.8V, 2-input NAND Typ.)\r\n• Selectable supply voltage: Operation on single power supply (1.8V, 1.5V),\r\n• Operation;

Epson

爱普生