丝印：S1A；1 A very low dropout fast transient ultra-low noise linear regulator

Description The LD56100 high accuracy voltage regulator provides 1 A of current from an input voltage ranging from 1.8 V to 5.5 V, with a typical dropout voltage of 120 mV. It is available in DFN8 (1.2 x 1.6 mm) package, allowing the maximum space saving. The device is stabilized with a cerami

文件：1.5688 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

丝印：s1A；Package：SOT-23；NPN Silicon Switching Transistor

NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S: Two (galvanic) internal isolated transistors with good matching in one package • Complementary types: SMBT3906... MMBT3906 • SMBT3904S: For orientat

文件：207.83 Kbytes 页数：7 Pages

Infineon

英飞凌

丝印：S1A；Package：DO-214AC；Surface Mount General Purpose Silicon Rectifiers

Features ● Low profile space ● Ideal for automated placement ● Glass passivated chip junction ● Low forward voltage drop ● Low leakage current ● High forward surage capability ● High temperatrue soldering˖ 260ć/10 seconds at terminals ● Component in accordance to RoHS 2002/95/1 and

文件：439.82 Kbytes 页数：3 Pages

YFWDIODE

佑风微电子

丝印：S1A；Package：DO-214AC；General-Purpose Rectifiers

Description In the world of commodity rectifiers, onsemi S1 family of 1 A, P−I−N, SMA rectifiers stand out for their optimized low leakage, low capacitance, and fast response time. This was achieved while maintaining the industry standard VF max of 1.1 V at 1 A and a 30 A surge rating. In tod

文件：156.84 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

丝印：s1A；Package：SOT-23；NPN Silicon Switching Transistor

NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S: Two (galvanic) internal isolated transistors with good matching in one package • Complementary types: SMBT3906... MMBT3906 • SMBT3904S: For orientat

文件：207.83 Kbytes 页数：7 Pages

Infineon

英飞凌

丝印：s1A；Package：SOT-363；NPN Silicon Switching Transistor Array

NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S: Two (galvanic) internal isolated transistors with good matching in one package • Complementary types: SMBT3906... MMBT3906 • SMBT3904S: For orientat

文件：76 Kbytes 页数：8 Pages

Infineon

英飞凌

丝印：s1A；Package：SOT-26；NPN Silicon Switching Transistor Array

NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S / SMBT3904U: Two (galvanic) internal isolated transistors with good matching in one package • Complementary types: SMBT3906... MMBT3906 • SMBT3904S / U: For or

文件：76.54 Kbytes 页数：8 Pages

Infineon

英飞凌

丝印：S1A；Package：SOD-123FL；Surface Mount Standard Rectifiers

文件：1.10389 Mbytes 页数：3 Pages

JUXING

广东钜兴电子

丝印：s1A；Package：SOT-23；NPN Silicon Switching Transistors

文件：146.92 Kbytes 页数：13 Pages

Infineon

英飞凌

丝印：s1A；Package：SOT23；NPN Silicon Switching Transistors

文件：867.93 Kbytes 页数：11 Pages

Infineon

英飞凌