丝印：S1P；Package：SC70；NPN Epitaxial Silicon Transistor

Features • General-Purpose Transistor • Collector-Emitter Voltage: VCEO = 40 V

文件：237.38 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：s1P；Package：SOT-23；NPN Silicon Switching Transistor

NPN Silicon Switching Transistor • Low collector-emitter saturation voltage • Complementary type: SMBT2907A / MMBT2907A (PNP) • Pb-free (RoHS compliant) package • Qualified according AEC Q101

文件：210.33 Kbytes 页数：6 Pages

INFINEON

英飞凌

丝印：s1P；Package：SOT-23；Low collector-emitter saturation voltage

NPN Silicon Switching Transistor • Low collector-emitter saturation voltage • Complementary type: SMBT2907A / MMBT2907A (PNP) • Pb-free (RoHS compliant) package • Qualified according AEC Q101

文件：538.94 Kbytes 页数：8 Pages

INFINEON

英飞凌

丝印：s1P；Package：SOT-23；Low collector-emitter saturation voltage

NPN Silicon Switching Transistor • Low collector-emitter saturation voltage • Complementary type: SMBT2907A / MMBT2907A (PNP) • Pb-free (RoHS compliant) package • Qualified according AEC Q101

文件：538.94 Kbytes 页数：8 Pages

INFINEON

英飞凌

丝印：s1P；Package：SOT-23；NPN Silicon Switching Transistor

NPN Silicon Switching Transistor • Low collector-emitter saturation voltage • Complementary type: SMBT2907A / MMBT2907A (PNP) • Pb-free (RoHS compliant) package • Qualified according AEC Q101

文件：210.33 Kbytes 页数：6 Pages

INFINEON

英飞凌

丝印：s1P；Package：SOT-23；NPN Silicon Switching Transistor Low collector-emitter saturation voltage

文件：83.72 Kbytes 页数：8 Pages

INFINEON

英飞凌

丝印：s1P；Package：SOT-23；NPN Silicon Switching Transistor Low collector-emitter saturation voltage

文件：83.72 Kbytes 页数：8 Pages

INFINEON

英飞凌

High Current Density Surface-Mount Glass Passivated Rectifiers

FEATURES • Very low profile - typical height of 1.0 mm • Ideal for automated placement • Glass passivated pellet chip junction • Low forward voltage drop • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified • Material categorization:

文件：100.89 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface-Mount Glass Passivated Rectifiers

FEATURES • Very low profile - typical height of 1.0 mm • Ideal for automated placement • Glass passivated pellet chip junction • Low forward voltage drop • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified • Material categorization:

文件：100.89 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface-Mount Glass Passivated Rectifiers

FEATURES • Very low profile - typical height of 1.0 mm • Ideal for automated placement • Glass passivated pellet chip junction • Low forward voltage drop • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified • Material categorization:

文件：100.89 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司