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SSD12P10

P-ChannelEnhancementMOSFET

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SSD12P10

P-Channel100V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

STRH12P10

Rad-Hard100V,12A,P-channelPowerMOSFET

Features •Fastswitching •100avalanchetested •Hermeticpackage •100kradTID •SEEradiationhardened Description TheSTRH12P10isaP-channelPowerMOSFETabletooperateundersevere environmentconditionsandradiationexposure. Itprovideshighreliabilityperformanceandimmu

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STRH12P10GYG

Rad-Hard100V,12A,P-channelPowerMOSFET

Features •Fastswitching •100avalanchetested •Hermeticpackage •100kradTID •SEEradiationhardened Description TheSTRH12P10isaP-channelPowerMOSFETabletooperateundersevere environmentconditionsandradiationexposure. Itprovideshighreliabilityperformanceandimmu

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STRH12P10GYT

Rad-Hard100V,12A,P-channelPowerMOSFET

Features •Fastswitching •100avalanchetested •Hermeticpackage •100kradTID •SEEradiationhardened Description TheSTRH12P10isaP-channelPowerMOSFETabletooperateundersevere environmentconditionsandradiationexposure. Itprovideshighreliabilityperformanceandimmu

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

UTT12P10

100V,12AP-CHANNELPOWERMOSFET

UTCUnisonic Technologies

友顺友顺科技股份有限公司

V12P10

HighCurrentDensitySurfaceMountTMBS짰(TrenchMOSBarrierSchottky)Rectifier

FEATURES •Verylowprofile-typicalheightof1.1mm •Idealforautomaticplacement •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -

VishayVishay Siliconix

威世科技威世科技半导体

V12P10

HighCurrentDensitySurfaceMountTrenchMOSBarrierSchottkyRectifier

VishayVishay Siliconix

威世科技威世科技半导体

V12P10

HighCurrentDensitySurfaceMountTrenchMOSBarrierSchottkyRectifier

VishayVishay Siliconix

威世科技威世科技半导体

V12P10

HighCurrentDensitySurfaceMountTrenchMOSBarrierSchottkyRectifier

VishayVishay Siliconix

威世科技威世科技半导体

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