Aerospace and defense N-channel 100 V

文件：822.55 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

Aerospace and defense N-channel 100 V

ST

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 180A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.7mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

文件：333.06 Kbytes 页数：2 Pages

ISC

无锡固电

High avalanche ruggedness

文件：565.51 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体