首页 >RTL8208E>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SiT8208-DIP-datesheet.V1 | YXCSHENZHEN YANGXING TECHNOLOGY CO., LTD 扬兴深圳扬兴科技有限公司 | YXC | ||
UltraPerformanceOscillator | SITIMESiTime Corp. 赛特时脉美商赛特时脉股份有限公司 | SITIME | ||
DualN-ChannelEnhancementModeFieldEffectTransistor FEATURES ●SurfaceMountPackage. ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●ESDProtected. | SamhopSamHop Microelectronics Corp. 三合微科三合微科股份有限公司 | Samhop | ||
ATMInterconnect Description TheCelXpresT8208deviceintegratesalloftherequiredfunctionalitytotransportATMcellsacrossabackplanearchitecturewithhigh-speedcelltrafficexceeding1.5Gbits/stoamaximumof32destinations.Themanagementofmultipleservicecategoriesandmonitoringofperformance | agere Agere Systems | agere | ||
5.8WDUALAUDIOPOWERAMPLIFIER | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
HighEfficiency1MHz,2AStepUpRegulator | TECHCODETECHCODE SEMICONDUCTOR, INC. 泰德美国泰德半导体有限公司 | TECHCODE | ||
LithiumIonBatteryApplicationsNotebookPCApplicationsPortableEquipmentApplications | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
TOSHIBAFieldEffectTransistorSiliconNChannelMOSType(U-MOSIII) LithiumIonBatteryApplications NotebookPCApplications PortableEquipmentApplications •Smallfootprintduetosmallandthinpackage •Lowdrain-sourceONresistance:RDS(ON)=38mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=6.3S(typ.) •Lowleakagecurrent:IDSS=10µA(ma | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
LithiumIonBatteryApplications | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA |
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