首页 >RTL8161GSH>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Anchor,NoWrench,8inx66inThimbleye | HUBBELL HUBBELL INCORPORATED | HUBBELL | ||
Diagonalcuttersoval | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 | ||
T1/CEPTQuadPortT1/E1 | FILTRANFiltran LTD 费尔兰特 | FILTRAN | ||
12V,5VLowDropoutDualRegulatorwithENABLE Description TheCS8161isa12V/5Vdualoutputlinearregulator.The12V±5outputsources400mAandthe5V±2.0outputsources200mA. TheonboardENABLEfunction controlstheregulatorÕstwooutputs.WhentheENABLEpinislow,theregulatorisplacedinSLEEPmode.Bothoutputsaredisabled | CHERRY Cherry Semiconductor Corporation | CHERRY | ||
AC-DCOfflineSwitchingControllers/Regulators | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
12V,5.0VLowDropoutDualRegulatorwithENABLE | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
DRV816x100VHalf-BridgeSmartGateDriverwithIntegratedProtectionandCurrentSenseAmplifier 1Features •DrivestwoN-channelMOSFETsinhalf-bridge configuration –High-sideMOSFETsource/drainupto102V (absolutemax) –8V(5VDRV8162L)to20Vgatedrivepower supply –Integratedbootstrapdiode •FunctionalSafetyQuality-Managed –Documentationavailabletoaidfunctionals | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
DRV816x100VHalf-BridgeSmartGateDriverwithIntegratedProtectionandCurrentSenseAmplifier 1Features •DrivestwoN-channelMOSFETsinhalf-bridge configuration –High-sideMOSFETsource/drainupto102V (absolutemax) –8V(5VDRV8162L)to20Vgatedrivepower supply –Integratedbootstrapdiode •16-levelgatedrivepeakcurrent –16mA-1000mAsourcecurrent –32mA-2000m | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
DRV816x100VHalf-BridgeSmartGateDriverwithIntegratedProtectionandCurrentSenseAmplifier 1Features •DrivestwoN-channelMOSFETsinhalf-bridge configuration –High-sideMOSFETsource/drainupto102V (absolutemax) –8V(5VDRV8162L)to20Vgatedrivepower supply –Integratedbootstrapdiode •16-levelgatedrivepeakcurrent –16mA-1000mAsourcecurrent –32mA-2000m | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
DRV816x100VHalf-BridgeSmartGateDriverwithIntegratedProtectionandCurrentSenseAmplifier 1Features •DrivestwoN-channelMOSFETsinhalf-bridge configuration –High-sideMOSFETsource/drainupto102V (absolutemax) –8V(5VDRV8162L)to20Vgatedrivepower supply –Integratedbootstrapdiode •FunctionalSafetyQuality-Managed –Documentationavailabletoaidfunctionals | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 |
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