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SZNUF8152

8-ChannelEMIFilterwithIntegratedESDProtection

ONSEMION Semiconductor

安森美半导体安森美半导体公司

TD-8152

MICROWAVENOISETUBES&NOISESOURCES

DESCRIPTION CPClare’sTDSeriesofgasdischargemicrowavenoisetubesandTNSeriesofgasdischargemicrowavenoisesourcesaretheelementinamicrowaveRFsystemthatallowsaccuratemeasurementsofthenoisefigureofthereceiveroritscomponents.Therequirementsofadeviceusedforma

Clare

Clare, Inc.

UPC8152TA

BIPOLARANALOGINTEGRATEDCIRCUITS

FEATURES •Lowcurrentconsumption:UPC8128TA;ICC=2.8mATYP.@VCC=3.0V UPC8151TA;ICC=4.2mATYP.@VCC=3.0V UPC8152TA;ICC=5.6mATYP.@VCC=3.0V •Supplyvoltage:VCC=2.4to3.3V •Highefficiency:UPC8128TA;PO(1dB)=-4.0dBmTYP.@f=1GHz UPC8151TA;PO

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

UPC8152TA

SILICONMMICLOWCURRENTAMPLIFIERSFORCELLULAR/CORDLESSTELEPHONES

DESCRIPTION ThePPC8128TA,PPC8151TAandPPC8152TAaresiliconmonolithicintegratedcircuitsdesignedasbufferamplifiersforcellular/cordlesstelephones.Theseamplifierscanrealizelowcurrentconsumptionwithexternalchipinductor(example:1005size)whichcannotberealizedonintern

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

UPC8152TB

BIPOLARANALOGINTEGRATEDCIRCUITS

FEATURES •Supplyvoltage:VCC=2.4to3.3V •Lowcurrentconsumption:UPC8128TB;ICC=2.8mATYP.@VCC=3.0V UPC8151TB;ICC=4.2mATYP.@VCC=3.0V UPC8152TB;ICC=5.6mATYP.@VCC=3.0V •Highefficiency:UPC8128TB;PO(1dB)=−4.0dBmTYP.@f=1GHz UPC8151TB;PO(1dB)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

UPC8152TB

SILICONMMICLOWCURRENTAMPLIFIERSFORCELLULAR/CORDLESSTELEPHONES

DESCRIPTION ThePPC8128TA,PPC8151TAandPPC8152TAaresiliconmonolithicintegratedcircuitsdesignedasbufferamplifiersforcellular/cordlesstelephones.Theseamplifierscanrealizelowcurrentconsumptionwithexternalchipinductor(example:1005size)whichcannotberealizedonintern

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

UPC8152TB

SILICONMMICLOWCURRENTAMPLIFIERFORMOBILECOMMUNICATIONS

DESCRIPTION TheµPC8179TBisasiliconmonolithicintegratedcircuitdesignedasamplifierformobilecommunications.ThisICcanrealizelowcurrentconsumptionwithexternalchipinductorwhichcannotberealizedoninternal50ΩwidebandmatchedIC.Thislowcurrentamplifieroperateson3.0

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

UPC8152TB

BIPOLARANALOGINTEGRATEDCIRCUIT

CEL

California Eastern Labs

UPC8152TB

SILICONMMICLOWCURRENTAMPLIFIERSFORCELLULAR/CORDLESSTELEPHONES

DESCRIPTION TheµPC8128TB,µPC8151TBandµPC8152TBaresiliconmonolithicintegratedcircuitsdesignedasbufferamplifiersforcellularorcordlesstelephones.Theseamplifierscanrealizelowcurrentconsumptionwithexternalchipinductor(eg1005size)whichcannotberealizedoninternal50

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

UPC8152TB

SILICONMMICLOWCURRENTAMPLIFIERFORMOBILECOMMUNICATIONS

CEL

California Eastern Labs

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