首页 >RTL8152B-VB-CG存储IC>规格书列表
零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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8-ChannelEMIFilterwithIntegratedESDProtection | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
MICROWAVENOISETUBES&NOISESOURCES DESCRIPTION CPClare’sTDSeriesofgasdischargemicrowavenoisetubesandTNSeriesofgasdischargemicrowavenoisesourcesaretheelementinamicrowaveRFsystemthatallowsaccuratemeasurementsofthenoisefigureofthereceiveroritscomponents.Therequirementsofadeviceusedforma | Clare Clare, Inc. | Clare | ||
BIPOLARANALOGINTEGRATEDCIRCUITS FEATURES •Lowcurrentconsumption:UPC8128TA;ICC=2.8mATYP.@VCC=3.0V UPC8151TA;ICC=4.2mATYP.@VCC=3.0V UPC8152TA;ICC=5.6mATYP.@VCC=3.0V •Supplyvoltage:VCC=2.4to3.3V •Highefficiency:UPC8128TA;PO(1dB)=-4.0dBmTYP.@f=1GHz UPC8151TA;PO | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SILICONMMICLOWCURRENTAMPLIFIERSFORCELLULAR/CORDLESSTELEPHONES DESCRIPTION ThePPC8128TA,PPC8151TAandPPC8152TAaresiliconmonolithicintegratedcircuitsdesignedasbufferamplifiersforcellular/cordlesstelephones.Theseamplifierscanrealizelowcurrentconsumptionwithexternalchipinductor(example:1005size)whichcannotberealizedonintern | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
BIPOLARANALOGINTEGRATEDCIRCUITS FEATURES •Supplyvoltage:VCC=2.4to3.3V •Lowcurrentconsumption:UPC8128TB;ICC=2.8mATYP.@VCC=3.0V UPC8151TB;ICC=4.2mATYP.@VCC=3.0V UPC8152TB;ICC=5.6mATYP.@VCC=3.0V •Highefficiency:UPC8128TB;PO(1dB)=−4.0dBmTYP.@f=1GHz UPC8151TB;PO(1dB) | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SILICONMMICLOWCURRENTAMPLIFIERSFORCELLULAR/CORDLESSTELEPHONES DESCRIPTION ThePPC8128TA,PPC8151TAandPPC8152TAaresiliconmonolithicintegratedcircuitsdesignedasbufferamplifiersforcellular/cordlesstelephones.Theseamplifierscanrealizelowcurrentconsumptionwithexternalchipinductor(example:1005size)whichcannotberealizedonintern | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
SILICONMMICLOWCURRENTAMPLIFIERFORMOBILECOMMUNICATIONS DESCRIPTION TheµPC8179TBisasiliconmonolithicintegratedcircuitdesignedasamplifierformobilecommunications.ThisICcanrealizelowcurrentconsumptionwithexternalchipinductorwhichcannotberealizedoninternal50ΩwidebandmatchedIC.Thislowcurrentamplifieroperateson3.0 | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
BIPOLARANALOGINTEGRATEDCIRCUIT | CEL California Eastern Labs | CEL | ||
SILICONMMICLOWCURRENTAMPLIFIERSFORCELLULAR/CORDLESSTELEPHONES DESCRIPTION TheµPC8128TB,µPC8151TBandµPC8152TBaresiliconmonolithicintegratedcircuitsdesignedasbufferamplifiersforcellularorcordlesstelephones.Theseamplifierscanrealizelowcurrentconsumptionwithexternalchipinductor(eg1005size)whichcannotberealizedoninternal50 | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
SILICONMMICLOWCURRENTAMPLIFIERFORMOBILECOMMUNICATIONS | CEL California Eastern Labs | CEL |
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