首页 >RTL8106E-CG>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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InfraredSensorsLineGuide FEATURES REFLECTIVESENSORS HOA1395. Features:Side-lookingplasticpackage •Phototransistoroutput •Infraredemitterandphototransistordetectorinasinglepackage •Lowprofilefordesignflexibility •Designedforshort-distancedetection •Enhancedsensitivity•Unfocusedforsensi | HoneywellHoneywell Solid State Electronics Center 霍尼韦尔霍尼韦尔国际 | Honeywell | ||
InfraredSensorsLineGuide | HONEYWELL-ACCHoneywell Accelerometers 霍尼韦尔霍尼韦尔国际有限公司 | HONEYWELL-ACC | ||
SiliconPhotodarlington | HoneywellHoneywell Solid State Electronics Center 霍尼韦尔霍尼韦尔国际 | Honeywell | ||
STEREOHEADPHONEPOWERAMPLIFIER(1.5VUSE) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
STEREOHEADPHONEPOWERAMPLIFIER(1.5VUSE) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
SILICONPCHANNELMOSTYPE HighSpeedandHighEfficiencyDC−DCConverters LithiumIonBatteryApplications NotebookPCApplications PortableEquipmentApplications Smallfootprintduetosmallandthinpackage Highspeedswitching Smallgatecharge:Qg=52nC(typ.) Lowdrain−sourceONresista | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
FieldEffectTransistorSiliconPChannelMOSType(U-MOS?? LithiumIonBatteryApplications NotebookPCApplications PortableEquipmentApplications •Smallfootprintduetosmallandthinpackage •Lowdrain-sourceON-resistance:RDS(ON)=2.9mΩ(typ.) (VG | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
MOSFETsSiliconP-ChannelMOS(U-MOS) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
Lithium-IonSecondaryBatteriesPowerManagementSwitchesNotebookPCs | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA |
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