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sit8103

SITIMESiTime Corp.

赛特时脉美商赛特时脉股份有限公司

SPW8103S

DualOP-AMPand2.5V0.7VoltageReference

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

TPC8103

TRANSISTORSILICONPCHANNELMOSTYPE

LithiumIonBatteryApplications PortableEquipmentApplications NotebookPCs •Smallfootprintduetosmallandthinpackage •Lowdrain-sourceONresistance:RDS(ON)=9.5mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=20S(typ.) •Lowleakagecurrent:IDSS=−10µA(max)(VDS=−

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TPC8103

P-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

TPCA8103

P-Channel30-V(D-S)MOSFET

FEATURES •Halogen-free •TrenchFET®PowerMOSFET •100RgTested APPLICATIONS •Notebook -LoadSwitch

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

TPCA8103

LithiumIonBatteryApplicationsNotebookPCApplicationsPortableEquipmentApplications

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TPCA8103

TOSHIBAFieldEffectTransistorSiliconPChannelMOSType(U-MOS4)

NotebookPCApplications PortableEquipmentApplications •Smallfootprintduetoasmallandthinpackage •Lowdrain-sourceON-resistance: RDS(ON)=9.4mΩ(typ.)(VGS=−10V) •Lowleakagecurrent:IDSS=-10μA(max)(VDS=-30V) •Enhancementmode:

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TPCC8103

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TPCC8103

NoteboookPCApplicationsPortableEqipmentApplications

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TPCC8103

FieldEffectTransistorSiliconP-ChannelMOSType(U-MOS??

NotebookPCApplications PortableEquipmentApplications •Smallfootprintduetoasmallandthinpackage •Lowdrain-sourceON-resistance: RDS(ON)=9.4mΩ(typ.)(VGS=−10V) •Lowleakagecurrent:IDSS=-10μA(max)(VDS=-30V) •Enhancementmode:V

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

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