首页 >RT9024GE-CUTTAPE>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
Low-DropoutLinearRegulatorControllerwithPGOODIndication GeneralDescription TheRT9024isalow-dropoutvoltageregulatorcontrollerwithaspecificPGOODindicatingscheme.ThepartcoulddriveanexternalN-MOSFETforvariousapplications.ThepartisoperatedwithVCCpowerrangingfrom3.8Vto13.5V.Withsuchatopology,itswithadvantagesoffl | RichTekRichtek USA Inc. 台湾立绮立绮科技 | RichTek | ||
900MHztransmitmodulatorand1.3GHzfractional-Nsynthesizer DESCRIPTION Thisspecificationdefinestherequirementsforatransmittermodulatorandfractional–NsynthesizerICtobeusedincellulartelephoneswhichemploytheNorthAmericanDualModeCellularSystem(IS–136). FEATURES •Lowcurrentfrom3.75Vsupply •Lowphasenoise •Mainloopwith | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
AdvancedPowerMOSFET FEATURES ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerLeakageCurrent:10µA(Max.)@VDS=-60V ●LowerRDS(ON):0.206Ω(Typ.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscP-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
AvalancheRuggedTechnology FEATURES ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerLeakageCurrent:10µA(Max.)@VDS=-60V ●LowerRDS(ON):0.206Ω(Typ.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
AvalancheRuggedTechnology FEATURES ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerLeakageCurrent:10µA(Max.)@VDS=-60V ●LowerRDS(ON):0.206Ω(Typ.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
AdvancedPowerMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
AdvancedPowerMOSFET FEATURES ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerLeakageCurrent:10µA(Max.)@VDS=-60V ●LowerRDS(ON):0.206Ω(Typ.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
P-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
iscP-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
RepetitiveAvalancheRated | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surface-mount(IRFR9024,SiHFR9024) •Straightlead(IRFU9024,SiHFU9024) •Availableintapeandreel •P-channel •Fastswitching •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th | VishayVishay Siliconix 威世科技 | Vishay |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RICHTEK |
08+ |
SOT23-6 |
11990 |
现货-ROHO |
询价 | ||
RICHTEK |
2017+ |
SOT23-6 |
24896 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | ||
RICHTEK |
16+ |
SOT23-6 |
3786 |
一片起订!原装低价支持实单! |
询价 | ||
RICHTEK |
2016+ |
SOT23-6 |
6523 |
只做进口原装现货!假一赔十! |
询价 | ||
RICHTEK |
2016+ |
SOT23-6 |
1900 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
RICHTEK |
2021+ |
SOT23-6 |
6814 |
百分百原装正品 |
询价 | ||
RICHTEK |
23+ |
SOT23-6 |
8650 |
受权代理!全新原装现货特价热卖! |
询价 | ||
23+ |
N/A |
45780 |
正品授权货源可靠 |
询价 | |||
RICHTEK/立锜 |
1833+ |
SOT23-6 |
152 |
原装现货!天天特价!随时可以货! |
询价 | ||
RICHTEK |
2020+ |
SOT23-6 |
12154 |
公司主营品牌,全新原装现货超低价! |
询价 |
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