SiC SBD

RSS20065K是瑞森采用先进的碳化硅SBD技术制造的SiC 肖特基二极管，该产品拥有较强的抗浪涌冲击能力，优良的温度特性和开关特性。能提升方案性能效率，缩少空间减轻重量和零件数量，及增强系统可靠性。 • IF(TC≤135℃)=26A \n• 175°C工作结温\n• 良好的开关特性;

REASUNOS

瑞森半导体

650 V power Schottky silicon carbide diode

Features  No reverse recovery charge in application current range  Switching behavior independent of temperature  Dedicated to PFC applications  Insulated package TO-220AC ins:  Insulated voltage: 2500 V rms  Typical package capacitance: 7 pF  High forward surge capability  ECOPACK

文件：631.92 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

650 V, dual 10 A, power Schottky silicon carbide diode

Features • No or negligible reverse recovery • Switching behavior independent of temperature • Low Forward voltage drop • Operating Tj from -40 °C to +175 °C • ECOPACK2 compliant component • Power efficient product Description The STPSC20065C is an ultra-high performance power Schottky d

文件：227.93 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

650 V power Schottky silicon carbide diode

Features  No reverse recovery charge in application current range  Switching behavior independent of temperature  Dedicated to PFC applications  Insulated package TO-220AC ins:  Insulated voltage: 2500 V rms  Typical package capacitance: 7 pF  High forward surge capability  ECOPACK

文件：631.92 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体