650 V、10 A双路碳化硅功率肖特基二极管

The STPSC20065C is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patt • No or negligible reverse recovery \n• Switching behavior independent of temperature \n• Low Forward voltage drop \n• Operating Tj from -40 °C to +175 °C \n• ECOPACK2 compliant component \n• Power efficient product;

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650 V, dual 10 A, power Schottky silicon carbide diode

Features • No or negligible reverse recovery • Switching behavior independent of temperature • Low Forward voltage drop • Operating Tj from -40 °C to +175 °C • ECOPACK2 compliant component • Power efficient product Description The STPSC20065C is an ultra-high performance power Schottky d

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Package：TO-247-3；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DFD THYR TRIAC \u0026 RECTIFIER

STMICROELECTRONICS

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650 V power Schottky silicon carbide diode

Features  No reverse recovery charge in application current range  Switching behavior independent of temperature  Dedicated to PFC applications  Insulated package TO-220AC ins:  Insulated voltage: 2500 V rms  Typical package capacitance: 7 pF  High forward surge capability  ECOPACK

文件：631.92 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

650 V power Schottky silicon carbide diode

Features  No reverse recovery charge in application current range  Switching behavior independent of temperature  Dedicated to PFC applications  Insulated package TO-220AC ins:  Insulated voltage: 2500 V rms  Typical package capacitance: 7 pF  High forward surge capability  ECOPACK

文件：631.92 Kbytes 页数：13 Pages

STMICROELECTRONICS

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Automotive 650 V power Schottky silicon carbide diode

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STMICROELECTRONICS

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