SiC SBD

RSS08065A是瑞森采用先进的碳化硅SBD技术制造的SiC 肖特基二极管，该产品拥有较强的抗浪涌冲击能力，优良的温度特性和开关特性。能提升方案性能效率，缩少空间减轻重量和零件数量，及增强系统可靠性。 • IF(TC≤135℃)=11A \n• 175°C工作结温\n• 良好的开关特性\n;

REASUNOS

瑞森半导体

8A竊?50V Silicon Carbide Diode

文件：66.56 Kbytes 页数：3 Pages

KIA

可易亚半导体

Silicon Carbide Schottky Diode

Features: • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • New Thin Wafer Technology • Positive Temperature Coefficient on VF • Temperature-independent Switching • Excellent surge current capability • 175°C Operating Junction Temperature Applications: • Switch Mode Power

文件：819.06 Kbytes 页数：4 Pages

HUIXIN

慧芯电子

650V/8A SiC Schottky Diode

Features: • Zero reverse recovery current • Zero forward recovery voltage • New thin wafer technology • Positive temperature coefficient on VF • Temperature-independent switching • Excellent surge current capability • 175°C operating junction temperature Applications: • Switch Mode Power

文件：440.67 Kbytes 页数：3 Pages

HUIXIN

慧芯电子