Silicon Carbide Schottky Diode

Features: • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • New Thin Wafer Technology • Positive Temperature Coefficient on VF • Temperature-independent Switching • Excellent surge current capability • 175°C Operating Junction Temperature Applications: • Switch Mode Power

文件：819.06 Kbytes 页数：4 Pages

HUIXIN

慧芯电子

650V/8A SiC Schottky Diode

Features: • Zero reverse recovery current • Zero forward recovery voltage • New thin wafer technology • Positive temperature coefficient on VF • Temperature-independent switching • Excellent surge current capability • 175°C operating junction temperature Applications: • Switch Mode Power

文件：440.67 Kbytes 页数：3 Pages

HUIXIN

慧芯电子

Enhanced surge capability

文件：575.41 Kbytes 页数：4 Pages

LITTELFUSE

力特

8A竊?50V Silicon Carbide Diode

文件：66.56 Kbytes 页数：3 Pages

KIA

可易亚半导体