Silicon Schottky Barrier Diode

Features • Low reverse current, Low capacitance. • Ultra small Flat Package (UFP) is suitable for surface mount design.

文件：28.82 Kbytes 页数：5 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon Schottky Barrier Diode for High Speed Switching

Features • Low reverse current, Low capacitance. • Ultra small Flat Lead Package (UFP) is suitable for surface mount design.

文件：60.71 Kbytes 页数：5 Pages

RENESAS

瑞萨

Silicon Schottky Barrier Diode

Features • Low reverse current, Low capacitance. • Ultra small Flat Package (UFP) is suitable for surface mount design.

文件：30.72 Kbytes 页数：1 Pages

KEXIN

科信电子

SILICON SCHOTTKY BARRIER DIODE

Features • Low reverse current, low capacitance • Ultra small flat package is suitable for surface mount design

文件：185.94 Kbytes 页数：3 Pages

SEMTECH_ELEC

先之科半导体

Low Forward Voltage Drop, Guard Ring Constrcition For Transient

FEATURES Low Forward Voltage Drop. Guard Ring Construction For Transient Protection. Negligible Reverse Recovery Time. Low Reverse Capacitance. APPLICATIONS Schotty barrier switching.

文件：632.25 Kbytes 页数：3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

Silicon Schottky Barrier Diode

• Low reverse current, Low capacitance.\n• Ultra small Flat Package (UFP) is suitable for surface mount design. ;

HITACHI

日立

Silicon Schottky Barrier Diode for High Speed Switching

• Low reverse current, Low capacitance.\n• Ultra small Flat Lead Package (UFP) is suitable for surface mount design. ;

Renesas

瑞萨

肖特基二极管

ST

意法半导体