HSC226

Silicon Schottky Barrier Diode

Features •Lowreversecurrent,Lowcapacitance. •UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign.

HSC226

Silicon Schottky Barrier Diode for High Speed Switching

Features •Lowreversecurrent,Lowcapacitance. •UltrasmallFlatLeadPackage(UFP)issuitableforsurfacemountdesign.

HSC226

Silicon Schottky Barrier Diode

Features •Lowreversecurrent,Lowcapacitance. •UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign.

HSC226

SILICON SCHOTTKY BARRIER DIODE

Features •Lowreversecurrent,lowcapacitance •Ultrasmallflatpackageissuitableforsurfacemountdesign

HSC226

Low Forward Voltage Drop, Guard Ring Constrcition For Transient

FEATURES LowForwardVoltageDrop. GuardRingConstructionForTransientProtection. NegligibleReverseRecoveryTime. LowReverseCapacitance. APPLICATIONS Schottybarrierswitching.

HSC226

Silicon Schottky Barrier Diode; • Low reverse current, Low capacitance.\n• Ultra small Flat Package (UFP) is suitable for surface mount design. ;

HSC226

Silicon Schottky Barrier Diode for High Speed Switching; • Low reverse current, Low capacitance.\n• Ultra small Flat Lead Package (UFP) is suitable for surface mount design. ;

HSC226

肖特基二极管;