内置FRD MOS

RSF38N30F是瑞森采用先进的掺铂金特殊工艺制造的N-沟道场效应晶体管，通过优化芯片结构，使该产品极大的降低了反向恢复导致的开关损耗。广泛应用于电机系列、逆变器、半桥/全桥应用等。 VDS =300V,ID =38A\nRDS(ON) <0.11Ω @ VGS = 10V\n漏电流小于1uA \n优异的反向恢复特性Trr可低至100nS\n100%的UIS测试;

REASUNOS

瑞森半导体

300V N-Channel MOSFET

Description UniFET™ MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable

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FAIRCHILD

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N-Channel MOSFET 300V, 38A, 0.085廓

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high

文件：495.83 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

文件：298.83 Kbytes 页数：14 Pages

FAIRCHILD

仙童半导体