650V N Channel MOSFET

RS7N65MD 是瑞森采用先进的平面MOS技术制造的N-沟道场效应晶体管，通过优化芯片结构，使该产品拥有较强的抗冲击能力，同时具有较低的导通内阻和的栅极电荷，能较大地降低产品EMI和开关损耗。广泛应用于开关电源，电源适配器、LED驱动等领域。 • VDS =650V,ID =7A \n• RDS(ON) <1.4Ω @ VGS = 10V\n• 抗冲击能力强\n• 较低的导通电阻\n• 100%的UIS测试;

REASUNOS

瑞森半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 7A@ TC=25℃ ·Drain Source Voltage -VDSS= 650V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.4Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：275.19 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 7A@ TC=25℃ ·Drain Source Voltage -VDSS= 650V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.4Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：298.35 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 7A@ TC=25℃ ·Drain Source Voltage -VDSS= 650V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.4Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：348.88 Kbytes 页数：2 Pages

ISC

无锡固电