40V N Channel MOSFET

REASUNOS

瑞森半导体

General Description

General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. The SGL40N150 is designed for induction heating applications. Features • High speed switching • Low saturation voltage : VCE(sat) = 3.7 V @ IC = 40A • High input impedance A

文件：351.67 Kbytes 页数：7 Pages

Fairchild

仙童半导体

General Description

General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. The SGL40N150D is designed for induction heating applications. Features • High speed switching • Low saturation voltage : VCE(sat) = 3.7 V @ IC = 40A • High input impedance

文件：422.24 Kbytes 页数：7 Pages

Fairchild

仙童半导体

Electrical Characteristics of the IGBT

General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. The FGL40N150D is designed for induction heating applications. Features • High speed switching • Low saturation voltage : VCE(sat)= 3.5 V @ IC = 40A • High i

文件：440.52 Kbytes 页数：7 Pages

Fairchild

仙童半导体

Electrical Characteristics of the IGBT

General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. The FGL40N150D is designed for induction heating applications. Features • High speed switching • Low saturation voltage : VCE(sat)= 3.5 V @ IC = 40A • High i

文件：440.52 Kbytes 页数：7 Pages

Fairchild

仙童半导体

1500V MOS Gated Thyristor

文件：181.79 Kbytes 页数：4 Pages

IXYS

艾赛斯