FGL40N150技术资料参数市场行情仙童半导体-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
FGL40N150	文件：440.52 Kbytes Page：7 Pages	Electrical Characteristics of the IGBT General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. The FGL40N150D is designed for induction heating applications. Features • High speed switching • Low saturation voltage : VCE(sat)= 3.5 V @ IC = 40A • High i 文件：440.52 Kbytes 页数：7 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
FGL40N150	文件：300 bytes Page：1 Pages	Electrical Characteristics of the IGBT	ONSEMI 安森美半导体	ONSEMI
FGL40N150D	文件：440.52 Kbytes Page：7 Pages	Electrical Characteristics of the IGBT General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. The FGL40N150D is designed for induction heating applications. Features • High speed switching • Low saturation voltage : VCE(sat)= 3.5 V @ IC = 40A • High i 文件：440.52 Kbytes 页数：7 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
FGL40N150D	文件：300 bytes Page：1 Pages	IGBT	ONSEMI 安森美半导体	ONSEMI

更多FGL40N150供应商更新时间2026-1-27 11:04:00