Electrical Characteristics of the IGBT

General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. The FGL40N150D is designed for induction heating applications. Features • High speed switching • Low saturation voltage : VCE(sat)= 3.5 V @ IC = 40A • High i

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Fairchild

仙童半导体

IGBT

ONSEMI

安森美半导体

1500V MOS Gated Thyristor

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IXYS

艾赛斯

General Description

General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. The SGL40N150 is designed for induction heating applications. Features • High speed switching • Low saturation voltage : VCE(sat) = 3.7 V @ IC = 40A • High input impedance A

文件：351.67 Kbytes 页数：7 Pages

Fairchild

仙童半导体

General Description

General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. The SGL40N150D is designed for induction heating applications. Features • High speed switching • Low saturation voltage : VCE(sat) = 3.7 V @ IC = 40A • High input impedance

文件：422.24 Kbytes 页数：7 Pages

Fairchild

仙童半导体