Silicon N-Channel MOS FET

Features High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65 (VDS = 6 V, f = 520 MHz) Compact package capable of surface mounting Electrostatic Discharge Immunity Test (IEC Standard, 61000-4-2, Level4)

文件：200.65 Kbytes 页数：13 Pages

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瑞萨

Silicon N-Channel MOS FET

Features High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65 (VDS = 6 V, f = 520 MHz) Compact package capable of surface mounting Electrostatic Discharge Immunity Test (IEC Standard, 61000-4-2, Level4)

文件：200.65 Kbytes 页数：13 Pages

RENESAS

瑞萨

Silicon N-Channel MOS FET

 High Output Power, High Gain, High Efficiency\n   Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65%\n   (VDS = 6 V, f = 520 MHz)\n Compact package capable of surface mounting\n Electrostatic Discharge Immunity Test (IEC Standard, 61000-4-2, Level4) ;

Renesas

瑞萨

Silicon N-Channel MOS FET

Features • High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65 (VDS = 6 V, f = 520 MHz) • Compact package capable of surface mounting • Electrostatic Discharge Immunity Test (IEC Standard, 61000-4-2, Level4)

文件：199.29 Kbytes 页数：13 Pages

RENESAS

瑞萨

Silicon N-Channel MOS FET

Features • High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65 (VDS = 6 V, f = 520 MHz) • Compact package capable of surface mounting • Electrostatic Discharge Immunity Test (IEC Standard, 61000-4-2, Level4)

文件：199.29 Kbytes 页数：13 Pages

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瑞萨

SCHOTTKY RECTIFIER

文件：209.84 Kbytes 页数：2 Pages

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