Silicon N-Channel MOS FET

Features • High Output Power, High Gain, High Efficiency Pout = +36 dBm, Linear Gain = 18 dB, PAE = 65 (f = 520 MHz) • Compact package capable of surface mounting

文件：152.47 Kbytes 页数：8 Pages

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瑞萨

Silicon N-Channel MOS FET

Features • High Output Power, High Gain, High Efficiency Pout = +36 dBm, Linear Gain = 18 dB, PAE = 65 (f = 520 MHz) • Compact package capable of surface mounting

文件：152.47 Kbytes 页数：8 Pages

RENESAS

瑞萨

Silicon N-Channel MOS FET

Renesas

瑞萨

Silicon N-Channel MOS FET

Features • High Output Power, High Gain, High Efficiency Pout = +36 dBm, Linear Gain = 18 dB, PAE = 65 (f = 520 MHz) • Compact package capable of surface mounting

文件：197.66 Kbytes 页数：13 Pages

RENESAS

瑞萨

SCHOTTKY SMALL SIGNAL DIODE

文件：122.48 Kbytes 页数：2 Pages

SSDI

Crimping pliers

文件：44.47 Kbytes 页数：2 Pages

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