RQA0008NXAQS数据表ic资料贸易商瑞萨-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
RQA0008NXAQS	文件：152.47 Kbytes Page：8 Pages	Silicon N-Channel MOS FET Features • High Output Power, High Gain, High Efficiency Pout = +36 dBm, Linear Gain = 18 dB, PAE = 65 (f = 520 MHz) • Compact package capable of surface mounting 文件：152.47 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
RQA0008NXAQS	文件：300 bytes Page：1 Pages	Silicon N-Channel MOS FET	Renesas 瑞萨	Renesas
RQA0008NXTL-E	文件：152.47 Kbytes Page：8 Pages	Silicon N-Channel MOS FET Features • High Output Power, High Gain, High Efficiency Pout = +36 dBm, Linear Gain = 18 dB, PAE = 65 (f = 520 MHz) • Compact package capable of surface mounting 文件：152.47 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
RQA0008RXDQS	文件：197.66 Kbytes Page：13 Pages	Silicon N-Channel MOS FET Features • High Output Power, High Gain, High Efficiency Pout = +36 dBm, Linear Gain = 18 dB, PAE = 65 (f = 520 MHz) • Compact package capable of surface mounting 文件：197.66 Kbytes 页数：13 Pages	RENESAS 瑞萨	RENESAS
RS0008F	文件：122.48 Kbytes Page：2 Pages	SCHOTTKY SMALL SIGNAL DIODE 文件：122.48 Kbytes 页数：2 Pages	SSDI	SSDI

更多RQA0008NXAQS供应商更新时间2025-10-13 17:05:00