丝印：RQA；Package：SOT-23(DBZ)；LM4041-N LM4041-N-Q1 Precision Micro Power Shunt Voltage Reference

1 Features Updated the numbering format for tables, figures, and cross-references throughout the document • Qualified for automotive applications • AEC-Q100 qualified with the following results: – Device temperature Grade 1: –40°C to +125°C ambient temperature range – Device temperature Gra

文件：1.82375 Mbytes 页数：55 Pages

TI

德州仪器

丝印：RQA；Package：SOT-23(DBZ)；LM4041-N LM4041-N-Q1 Precision Micro Power Shunt Voltage Reference

1 Features Updated the numbering format for tables, figures, and cross-references throughout the document • Qualified for automotive applications • AEC-Q100 qualified with the following results: – Device temperature Grade 1: –40°C to +125°C ambient temperature range – Device temperature Gra

文件：1.82375 Mbytes 页数：55 Pages

TI

德州仪器

丝印：RQA；Package：SOT-23(DBZ)；LM4041-N LM4041-N-Q1 Precision Micro Power Shunt Voltage Reference

1 Features Updated the numbering format for tables, figures, and cross-references throughout the document • Qualified for automotive applications • AEC-Q100 qualified with the following results: – Device temperature Grade 1: –40°C to +125°C ambient temperature range – Device temperature Gra

文件：1.82375 Mbytes 页数：55 Pages

TI

德州仪器

Silicon N-Channel MOS FET

Features • High Output Power, High Gain, High Efficiency Pout = +33 dBm, Linear Gain = 21 dB, PAE = 68 (f = 520 MHz) • Small Outline Package (WSON0303-2: 3.0 × 3.0 × 0.8mm)

文件：244.04 Kbytes 页数：13 Pages

RENESAS

瑞萨

Silicon N-Channel MOS FET

Features • High Output Power, High Gain, High Efficiency Pout = +33 dBm, Linear Gain = 21 dB, PAE = 68 (f = 520 MHz) • Small Outline Package (WSON0303-2: 3.0 × 3.0 × 0.8mm)

文件：244.04 Kbytes 页数：13 Pages

RENESAS

瑞萨

Silicon N-Channel MOS FET

Features • High output power, High gain, High efficiency Pout = +39.6 dBm, Linear gain = 20 dB, PAE = 68 (f = 520 MHz) • Small outline package (WSON0504-2: 5.0 × 4.0 × 0.8 mm)

文件：195.74 Kbytes 页数：18 Pages

RENESAS

瑞萨

Silicon N-Channel MOS FET

Features • High output power, High gain, High efficiency Pout = +39.6 dBm, Linear gain = 20 dB, PAE = 68 (f = 520 MHz) • Small outline package (WSON0504-2: 5.0 × 4.0 × 0.8 mm)

文件：195.74 Kbytes 页数：18 Pages

RENESAS

瑞萨

Silicon N-Channel MOS FET

Features • High Output Power, High Gain, High Efficiency Pout = +36 dBm, Linear Gain = 19 dB, PAE = 65 (f = 520 MHz) • Small Outline Package (WSON0303-2: 3.0 × 3.0 × 0.8mm)

文件：243.25 Kbytes 页数：13 Pages

RENESAS

瑞萨

Silicon N-Channel MOS FET

Features • High Output Power, High Gain, High Efficiency Pout = +36 dBm, Linear Gain = 19 dB, PAE = 65 (f = 520 MHz) • Small Outline Package (WSON0303-2: 3.0 × 3.0 × 0.8mm)

文件：243.25 Kbytes 页数：13 Pages

RENESAS

瑞萨

Silicon N-Channel MOS FET

Features • High Output Power, High Gain, High Efficiency Pout = +29 dBm, Linear Gain = 21 dB, PAE = 68 (f = 520 MHz) • Compact package capable of surface mounting

文件：163.44 Kbytes 页数：13 Pages

RENESAS

瑞萨