SI2302

N-ChannelEnhancementModeFieldEffectTransistor

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •20V,3.0A,RDS(ON)=55mΩ@VGS=4.5V RDS(ON)=82mΩ@VGS=2.5V •HighdensecelldesignforextremelylowRDS(ON) •Ruggedandreliable •Leadfreeproductisacquired •SOT-23Package •MarkingCode:S2 •Epo

SI2302

Plastic-EncapsulateMOSFETS

N-Channel20-V(D-S)MOSFET FEATURE ●TrenchFETPowerMOSFET APPLICATION ●LoadSwitchforPortableDevices ●DC/DCConverter

SI2302

N-CHANNELMOSFETinaSOT-23PlasticPackage

DESCRIPTIONS N-CHANNELMOSFETinaSOT-23PlasticPackage. FEATURES SuperhighdensecelldesignforlowRDS(ON),SOT-23package. APPLICATIONS Batterymanagement,Highspeedswitch,lowpowerDCtoDCconverter.

SI2302

N-ChannelEnhancementModeMOSFET

Feature ●16V/3.6A,RDS(ON)=100mΩ(MAX)@VGS=4.5V. RDS(ON)=140mΩ(MAX)@VGS=2.5V. ●SuperHighdensecelldesignforextremelylowRDS(ON). ●ReliableandRugged. ●SOT-23forSurfaceMountPackage. Applications ●PowerManagementPortableEquipmenta

SI2302

Plastic-EncapsulateMOSFETS

SI2302

N-ChannelEnhancementMOSFET

N-ChannelEnhancementMOSFET ■FEATURES TrenchFETPowerMOSFET

SI2302

Plastic-EncapsulateMosfets

FEATURES •HighdensecelldesignforextremelylowRDS(ON) •Ruggedandreliable •CaseMaterial:MoldedPlastic.

SI2302A

N-ChannelEnhancementModeFieldEffectTransistor

Features •RuggedandReliable •LeadFreeProductisAcquired •HighDenseCellDesignforExtremelyLowRDS(ON) •EpoxyMeetsUL94V-0FlammabilityRating •MoistureSensitivityLevel1 •HalogenFreeAvailableUponRequestbyAddingSuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffix

SI2302A

N-ChannelEnhancementMOSFET

Features VDS=20V RDS(on)=45mΩ@VGS=4.5V,ID=3.6A RDS(on)=60mΩ@VGS=2.5V,ID=3.1A

SI2302A

N-ChannelEnhancementMOSFET

Features VDS=20V RDS(on)=45mΩ@VGS=4.5V,ID=3.6A RDS(on)=60mΩ@VGS=2.5V,ID=3.1A