RN2106MFV带阻三极管资料使用说明书库存现货第3页-114ic电子网

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零件型号	下载订购	功能描述	制造商上传企业	LOGO
UM2106	文件：113.95 Kbytes Page：3 Pages	PINDIODE DESCRIPTION UM2100SeriesPINdiodesaredesignedfortransmit/receiveswitchandattenuatorapplicationsinHFband(2-30MHz)andbelow.Asseriesconfiguredswitches,theselonglifetime(25μstypical)diodescancontrolupto2.5kW,CWina50ohmsystem.InHFband,insertionlossisless	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
UM2106B	文件：2.81601 Mbytes Page：221 Pages	ProductChangeNotification	MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司	Microchip
UM2106D	文件：2.81601 Mbytes Page：221 Pages	ProductChangeNotification	MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司	Microchip
UPG2106	文件：87.38 Kbytes Page：12 Pages	L-BANDPADRIVERAMPLIFIER DESCRIPTION TheµPG2106TBandµPG2110TBareGaAsMMICforPAdriveramplifierwithvariablegainfunctionwhichweredevelopedforPDC(PersonalDigitalCellularinJapan)andanotherL-bandapplication.Thedevicecanoperatewith3.0V,havingthehighgainandlowdistortion.TheµPG2106TBis	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社	NEC
UPG2106TB	文件：155.75 Kbytes Page：3 Pages	L-BANDPADRIVERAMPLIFIER DESCRIPTION NECsUPG2106TBisaGaAsMMICforPAdriveramplifierswithvariablegainfunctionswhichwasdevelopedforL-bandapplications.Thedevicecanoperatewith3.0V,havinghighgainandlowdistortion. FEATURES •LOWVOLTAGEOPERATION:VDD1=VDD2=3.0V,fRF=889to960MHz@	CEL California Eastern Labs	CEL
UPG2106TB	文件：87.38 Kbytes Page：12 Pages	L-BANDPADRIVERAMPLIFIER DESCRIPTION TheµPG2106TBandµPG2110TBareGaAsMMICforPAdriveramplifierwithvariablegainfunctionwhichweredevelopedforPDC(PersonalDigitalCellularinJapan)andanotherL-bandapplication.Thedevicecanoperatewith3.0V,havingthehighgainandlowdistortion.TheµPG2106TBis	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社	NEC
UPG2106TB	文件：247.61 Kbytes Page：14 Pages	GaAsINTEGRATEDCIRCUITS FEATURES •Operationfrequency:mPG2106TB:fopt=889to960MHz :mPG2110TB:fopt=1429to1453MHz •Supplyvoltage:mPG2106TB,mPG2110TB:VDD1,2=2.7to3.3V(3.0VTYP.) •Circuitcurrent:mPG2106TB,mPG2110TB:IDD=25mATYP.@VDD1,2=3.0V,VAGC=2.5V,Pout=+8dBm •	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
VN2106	文件：457.83 Kbytes Page：4 Pages	N-ChannelEnhancement-ModeVerticalDMOSFETs AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan	SUTEX Supertex, Inc	SUTEX
VN2106N	文件：472.96 Kbytes Page：5 Pages	N-ChannelEnhancement-ModeVerticalDMOSFETs AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan	SUTEX Supertex, Inc	SUTEX
VP2106	文件：456.67 Kbytes Page：4 Pages	P-ChannelEnhancement-ModeVerticalDMOSFETs AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpeda	SUTEX Supertex, Inc	SUTEX

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市威尔健半导体有限公司	RN2106MFV带阻三极管	TOSHIBA/东芝	23+	NA	50000	全新原装正品现货,支持订货	询价
深圳市博中泰实业有限公司	RN2106MFV带阻三极管	TOSHIBA/东芝	24+	NA	60000	全新原装现货	询价
深圳市一线半导体有限公司	RN2107		24+		5000	公司存货	询价
深圳市鹏和科技有限公司	RN2107	TOSHIBA	24+	SOT-523SC-75SSM	5000	全现原装公司现货	询价
深圳市正迈科技有限公司	RN2107	TOSHIBA	23+	NA	2220	专业电子元器件供应链正迈科技特价代理特价，原装元器件供应，支持开发样品	询价
深圳市华斯顿科技有限公司	RN2107	TOSHIBA	25+23+	SOT23	32628	绝对原装正品全新进口深圳现货	询价
深圳市正纳电子有限公司	RN2107	TOSHIBA	ROHS+Original	NA	2220	专业电子元器件供应链/QQ 350053121 /正纳电子	询价
深圳市凯睿晟科技有限公司	RN2107	Bychip/百域芯	21+	SOT-523	30000	优势供应品质保障可开13点发票	询价
深圳市威雅利发展有限公司	RN2107	TOSHIBA	/		1200	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市得捷芯城科技有限公司	RN2107	TOSHIBA/东芝	24+	NA/	5350	原厂直销,现货供应,账期支持!	询价

更多RN2106MFV带阻三极管供应商更新时间2025-7-29 11:00:00

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