Product Change Notification

文件：2.81601 Mbytes 页数：221 Pages

Microchip

微芯科技

Package：接线柱；包装：卷带（TR） 类别：分立半导体产品 二极管 - 射频 描述：SI PPIN HERMETIC STUD

Microchip

微芯科技

L-BAND PA DRIVER AMPLIFIER

DESCRIPTION The µPG2106TB and µPG2110TB are GaAs MMIC for PA driver amplifier with variable gain function which were developed for PDC (Personal Digital Cellular in Japan) and another L-band application. The device can operate with 3.0 V, having the high gain and low distortion. The µPG2106TB is

文件：87.38 Kbytes 页数：12 Pages

NEC

瑞萨

L-BAND PA DRIVER AMPLIFIER

DESCRIPTION The µPG2106TB and µPG2110TB are GaAs MMIC for PA driver amplifier with variable gain function which were developed for PDC (Personal Digital Cellular in Japan) and another L-band application. The device can operate with 3.0 V, having the high gain and low distortion. The µPG2106TB is

文件：87.38 Kbytes 页数：12 Pages

NEC

瑞萨

L-BAND PA DRIVER AMPLIFIER

DESCRIPTION NECs UPG2106TB is a GaAs MMIC for PA driver amplifiers with variable gain functions which was developed for L-band applications. The device can operate with 3.0 V, having high gain and low distortion. FEATURES • LOW VOLTAGE OPERATION: VDD1 = VDD2 = 3.0 V, fRF = 889 to 960 MHz @

文件：155.75 Kbytes 页数：3 Pages

CEL