Bias resistor built-in transistor (BRT), 2-in-1

Application Scope：General-purpose\nPolarity：NPN×2\nInternal Connection：2-in-1 (Point-symmetrical)\nComplementary Product：RN2911AFS\nRoHS Compatible Product(s) (#)：Available Collector Current (Q1) IC 0.08 A \nCollector Current (Q2) IC 0.08 A \nCollector-emitter voltage (Q1) VCEO 50 V \nCollector-emitter voltage (Q2) VCEO 50 V ;

Toshiba

东芝

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

文件：140.46 Kbytes 页数：5 Pages

TOSHIBA

东芝

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA1911 is a switching device which can be driven directly by a 2.5-V power source. The µPA1911 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • Can be dri

文件：65.78 Kbytes 页数：8 Pages

NEC

瑞萨

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA1911A is a switching device which can be driven directly by a 2.5 V power source. The µPA1911A features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • Can be d

文件：382.36 Kbytes 页数：8 Pages

NEC

瑞萨

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA1911 is a switching device which can be driven directly by a 2.5-V power source. The µPA1911 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • Can be dri

文件：65.78 Kbytes 页数：8 Pages

NEC

瑞萨