UPA1706

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION ThisproductisN-ChannelMOSFieldEffectTransistordesignedforDC/DCconvertersandpowermanagementapplicationsofnotebookcomputers. FEATURES •SuperLowon-resistance RDS(on)1=5.8mΩ(TYP.)(VGS=10V,ID=7.0A) RDS(on)2=7.0mΩ(TYP.)(VGS=4.5V

UPA1706G

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION ThisproductisN-ChannelMOSFieldEffectTransistordesignedforDC/DCconvertersandpowermanagementapplicationsofnotebookcomputers. FEATURES •SuperLowon-resistance RDS(on)1=5.8mΩ(TYP.)(VGS=10V,ID=7.0A) RDS(on)2=7.0mΩ(TYP.)(VGS=4.5V

UPA1706TP

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheμPA1706TPwhichhasaheatspreaderisN-Channel MOSFieldEffectTransistordesignedforDC/DCconverter andpowermanagementapplicationofnotebookcomputer. FEATURES •Lowon-stateresistance RDS(on)1=7.8mΩMAX.(VGS=10V,ID=7.0A) RDS(on)2=10.0mΩMAX.(VGS=

UPA1706TP

SWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheµPA1706TPwhichhasaheatspreaderisN-ChannelMOSFieldEffectTransistordesignedforDC/DCconverterandpowermanagementapplicationofnotebookcomputer. FEATURES •Lowon-stateresistance RDS(on)1=7.8mΩMAX.(VGS=10V,ID=7.0A) RDS(on)2=10.0

VDS1706

ReceiverProtector