TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

Switching, Inverter Circuit, Interface Circuit and Driver Circuit • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process and miniaturize equipment. • Various resistance values are available to suit various circuit designs. • Complem

文件：162.16 Kbytes 页数：5 Pages

TOSHIBA

东芝

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

文件：268.3 Kbytes 页数：5 Pages

TOSHIBA

东芝

Bias resistor built-in transistor (BRT)

Application Scope：General-purpose\nPolarity：NPN\nInternal Connection：Single\nComplementary Product：RN2310\nAEC-Q101：Conform(*)\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 泰国 Collector Current IC 0.1 A \nCollector-emitter voltage VCEO 50 V ;

Toshiba

东芝

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

文件：268.3 Kbytes 页数：5 Pages

TOSHIBA

东芝

Package：SC-70，SOT-323；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS NPN 50V 0.1A USM

Toshiba Semiconductor and Storage

Package：SC-70，SOT-323；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS NPN 50V 0.1A USM

Toshiba Semiconductor and Storage

Package：SC-70，SOT-323；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：AUTO AEC-Q NPN BRT, Q1BSR=4.7K,

Toshiba Semiconductor and Storage