RMD080N10S资料datasheet下载市场行情-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
RMD080N10S	文件：300 bytes Page：1 Pages	SGT MOSFET	Reactor 亚成微	Reactor
RMD080N10S-AU	文件：300 bytes Page：1 Pages	车用MOSFET	Reactor 亚成微	Reactor
G080N10M	文件：1.0175 Mbytes Page：6 Pages	N-Channel Enhancement Mode Power MOSFET Description The G080N10M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件：1.0175 Mbytes 页数：6 Pages	GOFORD 谷峰半导体	GOFORD
G080N10T	文件：1.04223 Mbytes Page：6 Pages	N-Channel Enhancement Mode Power MOSFET Description The G080N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件：1.04223 Mbytes 页数：6 Pages	GOFORD 谷峰半导体	GOFORD
GT080N10K	文件：1.06561 Mbytes Page：6 Pages	N-Channel Enhancement Mode Power MOSFET Description The GT080N10K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件：1.06561 Mbytes 页数：6 Pages	GOFORD 谷峰半导体	GOFORD

更多RMD080N10S供应商更新时间2025-11-24 18:09:00