丝印：8205F；Package：SOT23-6；N-channel Double MOSFET in a SOT23-6 Plastic Package.

Features advanced trench technology to provide excellent RDS(on), low gate charge and operation with gate voltages as low as 2.5V.

文件：472.95 Kbytes 页数：7 Pages

RECTRON

丽正国际

R. F. Molded Chokes

[Ohmite Mfg. Co.]

文件：34.04 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

R. F. Molded Chokes

[Ohmite Mfg. Co.]

文件：34.04 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

丝印：8233；Package：DFN2X3-6L；Dual N-Channel Enhancement Mode MOSFET

Features Surface-mounted package Advanced trench cell design Extremely low threshold voltage ESD:2KV BV ≧ 20 V Ptot ≦ 16 W Id ≦ 15 A RDS(ON) ≦ 5.5 mΩ @ VGS = 4.5 V RDS(ON) ≦ 5.8 mΩ @ VGS = 3.9 V RDS(ON) ≦ 8.5 mΩ @ VGS = 2.5 V

文件：1.45232 Mbytes 页数：7 Pages

RECTRON

丽正国际

RJ45连接器

JWD

经纬达科技

铝电解电容

CAPXON

丰宾电子

铝电解电容

CAPXON

丰宾电子