丝印：A3004；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

General Features VDS = 30V,I D = 58A RDS(ON)

文件：236.09 Kbytes 页数：9 Pages

RECTRON

丽正国际

丝印：60N75；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET

Features VDS=75V ID=60A@ VGS=10V RDS(ON)

文件：562.22 Kbytes 页数：8 Pages

RECTRON

丽正国际

丝印：60N80；Package：DFN3x3；N-Channel 80V Fast Switching MOSFET

General Features VDS =80V,ID =60A RDS(ON)

文件：185.92 Kbytes 页数：6 Pages

RECTRON

丽正国际

丝印：60P04Y；Package：SOT-23-3L；P-Channel Enhancement Mode Power MOSFET

General Features VDS =-60V,ID =-4A RDS(ON)

文件：812.25 Kbytes 页数：7 Pages

RECTRON

丽正国际

丝印：60P60；Package：TO-263-2L；P-Channel Enhancement Mode Power MOSFET

General Features VDS =-60V,ID =-61A RDS(ON)

文件：789.95 Kbytes 页数：5 Pages

RECTRON

丽正国际

丝印：60P60；Package：TO-220；P-Channel Enhancement Mode Power MOSFET

General Features VDS =-60V,ID =-61A RDS(ON)

文件：564 Kbytes 页数：5 Pages

RECTRON

丽正国际

MEDIUM POWER GENERAL USE NON-INSULATED TYPE

• IF(AV) Average forward current ............ 60A • VRRM Repetitive peak reverse voltage ....................... 300V • TRIPLE ARMS • Non-Insulated Type APPLICATION Welders

文件：43 Kbytes 页数：3 Pages

Mitsubishi

三菱电机

MEDIUM POWER GENERAL USE NON-INSULATED TYPE

• IF(AV) Average forward current ............ 60A • VRRM Repetitive peak reverse voltage ....................... 300V • TRIPLE ARMS • Non-Insulated Type APPLICATION Welders

文件：43 Kbytes 页数：3 Pages

Mitsubishi

三菱电机

Built-in 700V high-pressure transistor

■ Built-in 700V high-pressure transistor; ■Application circuit design is simple, few components; ■ Built-in lock pulse width modulation and pulse-by-pulse current detection technology; ■Low voltage drop frequency and standby power consumption less than 0.3W; ■Built-in slope compensation and fe

文件：315.15 Kbytes 页数：7 Pages

REACTOR

亚成微

丝印：65N40；Package：PDFN3X3-8L；N-Channel Enhancement Mode Power MOSFET

Feature 40V,65A RDS(ON)

文件：800.57 Kbytes 页数：7 Pages

RECTRON

丽正国际