RM60N30DF

Marking：A3004；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

GeneralFeatures VDS=30V,ID=58A RDS(ON)

RM60N75LD

Marking：60N75；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET

Features VDS=75VID=60A@VGS=10V RDS(ON)

RM60N80D3

Marking：60N80；Package：DFN3x3；N-Channel 80V Fast Switching MOSFET

GeneralFeatures VDS=80V,ID=60A RDS(ON)

RM60P04Y

Marking：60P04Y；Package：SOT-23-3L；P-Channel Enhancement Mode Power MOSFET

GeneralFeatures VDS=-60V,ID=-4A RDS(ON)

RM60P60HD

Marking：60P60；Package：TO-263-2L；P-Channel Enhancement Mode Power MOSFET

GeneralFeatures VDS=-60V,ID=-61A RDS(ON)

RM60P60T2

Marking：60P60；Package：TO-220；P-Channel Enhancement Mode Power MOSFET

GeneralFeatures VDS=-60V,ID=-61A RDS(ON)

RM60SZ-6R

MEDIUM POWER GENERAL USE NON-INSULATED TYPE

•IF(AV)Averageforwardcurrent............60A •VRRMRepetitivepeakreversevoltage.......................300V •TRIPLEARMS •Non-InsulatedType APPLICATION Welders

RM60SZ-6S

MEDIUM POWER GENERAL USE NON-INSULATED TYPE

•IF(AV)Averageforwardcurrent............60A •VRRMRepetitivepeakreversevoltage.......................300V •TRIPLEARMS •Non-InsulatedType APPLICATION Welders

RM6204

Built-in 700V high-pressure transistor

■Built-in700Vhigh-pressuretransistor; ■Applicationcircuitdesignissimple,fewcomponents; ■Built-inlockpulsewidthmodulationandpulse-by-pulsecurrentdetectiontechnology; ■Lowvoltagedropfrequencyandstandbypowerconsumptionlessthan0.3W; ■Built-inslopecompensationandfe

RM65N40D3

Marking：65N40；Package：PDFN3X3-8L；N-Channel Enhancement Mode Power MOSFET

Feature 40V,65A RDS(ON)