FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE NON-INSULATED TYPE

HIGH SPEED SWITCHING USE NON-INSULATED TYPE • IDC DC current .................................. 50A • VRRM Repetitive peak reverse voltage ................ 600V • trr Reverse recovery time ............. 0.2µs • ONE ARM • Non-Insulated Type APPLICATION For snubber circuit (IPM or IGBT mo

文件：50.91 Kbytes 页数：3 Pages

MITSUBISHI

三菱电机

Super Fast Recovery Single Diode (50 Amperes/600 Volts)

Description: Powerex Super Fast Recovery Diodes are designed for use in applications requiring fast switching. Features: □ Non-Isolated Package □ Planar Chips □ trr = 200 ns Max. Applications: □ Snubber Circuits □ Switching Power Supplies □ Free Wheeling

文件：68.95 Kbytes 页数：2 Pages

POWEREX

FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE NON-INSULATED TYPE

HIGH SPEED SWITCHING USE NON-INSULATED TYPE • IDC DC current .................................. 50A • VRRM Repetitive peak reverse voltage ................ 600V • trr Reverse recovery time ............. 0.2µs • ONE ARM • Non-Insulated Type APPLICATION For snubber circuit (IPM or IGBT mo

文件：50.91 Kbytes 页数：3 Pages

MITSUBISHI

三菱电机

丝印：50N200；Package：TO-263；200V N-Ch Power MOSFET

Feature High Speed Power Switching Enhanced Body diode dv/dtcapability 100 UIS tested EnhancedAvalanche Ruggedness Pb-free lead plating

文件：793.53 Kbytes 页数：9 Pages

RECTRON

丽正国际

丝印：50N200；Package：TO-220；200V N-Ch Power MOSFET

Feature High Speed Power Switching Enhanced Body diode dv/dtcapability 100 UIS tested EnhancedAvalanche Ruggedness Pb-free lead plating

文件：793.53 Kbytes 页数：9 Pages

RECTRON

丽正国际

丝印：50N200；Package：TO-247；200V N-Ch Power MOSFET

Feature High Speed Power Switching Enhanced Body diode dv/dtcapability 100 UIS tested EnhancedAvalanche Ruggedness Pb-free lead plating

文件：793.53 Kbytes 页数：9 Pages

RECTRON

丽正国际

丝印：50N200；Package：TO-220F；200V N-Ch Power MOSFET

Feature High Speed Power Switching Enhanced Body diode dv/dtcapability 100 UIS tested EnhancedAvalanche Ruggedness Pb-free lead plating

文件：735.23 Kbytes 页数：7 Pages

RECTRON

丽正国际

丝印：50N250；Package：TO-220-3L；N-Channel Enhancement Mode Power MOSFET

General Features VDS =250V,ID =50A RDS(ON)

文件：346.37 Kbytes 页数：7 Pages

RECTRON

丽正国际

丝印：50N30；Package：DFN3x3；AdvancedPowerinnovateddesignand silicon process technology to achieve the lowest possible onresistance and fast switching performance.

Simple Drive Requirement Small Size & Lower Profile RoHS Compliant & Halogen-Free

文件：823.18 Kbytes 页数：6 Pages

RECTRON

丽正国际

丝印：50N60；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

General Features VDS =60V,ID =50A RDS(ON) 16mΩ @ V GS=10V RDS(ON) 20mΩ @ VGS=4.5V High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation

文件：1.51858 Mbytes 页数：7 Pages

RECTRON

丽正国际