RM50HG-12S

Super Fast Recovery Single Diode (50 Amperes/600 Volts)

Description: PowerexSuperFastRecoveryDiodesaredesignedforuseinapplicationsrequiringfastswitching. Features: □Non-IsolatedPackage □PlanarChips □trr=200nsMax. Applications: □SnubberCircuits □SwitchingPowerSupplies □FreeWheeling

RM50HG-12S

FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE NON-INSULATED TYPE

HIGHSPEEDSWITCHINGUSENON-INSULATEDTYPE •IDCDCcurrent..................................50A •VRRMRepetitivepeakreversevoltage................600V •trrReverserecoverytime.............0.2µs •ONEARM •Non-InsulatedType APPLICATION Forsnubbercircuit(IPMorIGBTmo

RM50HG-12S_01

FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE NON-INSULATED TYPE

HIGHSPEEDSWITCHINGUSENON-INSULATEDTYPE •IDCDCcurrent..................................50A •VRRMRepetitivepeakreversevoltage................600V •trrReverserecoverytime.............0.2µs •ONEARM •Non-InsulatedType APPLICATION Forsnubbercircuit(IPMorIGBTmo

RM50N200HD

丝印：50N200；Package：TO-263；200V N-Ch Power MOSFET

Feature HighSpeedPowerSwitching EnhancedBodydiodedv/dtcapability 100UIStested EnhancedAvalancheRuggedness Pb-freeleadplating

RM50N200T2

丝印：50N200；Package：TO-220；200V N-Ch Power MOSFET

Feature HighSpeedPowerSwitching EnhancedBodydiodedv/dtcapability 100UIStested EnhancedAvalancheRuggedness Pb-freeleadplating

RM50N200T7

丝印：50N200；Package：TO-247；200V N-Ch Power MOSFET

Feature HighSpeedPowerSwitching EnhancedBodydiodedv/dtcapability 100UIStested EnhancedAvalancheRuggedness Pb-freeleadplating

RM50N200TI

丝印：50N200；Package：TO-220F；200V N-Ch Power MOSFET

Feature HighSpeedPowerSwitching EnhancedBodydiodedv/dtcapability 100UIStested EnhancedAvalancheRuggedness Pb-freeleadplating

RM50N250T2

丝印：50N250；Package：TO-220-3L；N-Channel Enhancement Mode Power MOSFET

GeneralFeatures VDS=250V,ID=50A RDS(ON)

RM50N30DN

丝印：50N30；Package：DFN3x3；AdvancedPowerinnovateddesignand silicon process technology to achieve the lowest possible onresistance and fast switching performance.

SimpleDriveRequirement SmallSize&LowerProfile RoHSCompliant&Halogen-Free

RM50N60DFV

丝印：50N60；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

GeneralFeatures VDS=60V,ID=50A RDS(ON)16mΩ@VGS=10V RDS(ON)20mΩ@VGS=4.5V HighdensitycelldesignforultralowRdson Fullycharacterizedavalanchevoltageandcurrent GoodstabilityanduniformitywithhighEAS Excellentpackageforgoodheatdissipation