RM2309E

Marking：2309E；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

GeneralFeatures ESDRating:2000VHBM Highpowerandcurrenthandingcapability Leadfreeproductisacquired Surfacemountpackage VDS=-30V,ID=-3.5A RDS(ON)

RN2309

Switching,InverterCircuit,InterfaceCircuitAndDriverCircuitApplications

Switching,InverterCircuit,InterfaceCircuitAndDriverCircuitApplications Withbuilt-inbiasresistors Simplifycircuitdesign Reduceaquantityofpartsandmanufacturingprocess ComplementarytoRN1307~RN1309

RSZ-2309

1WattSMDMiniatureIsolatedSingleOutput

RSZ-2309HP

1WattSMDMiniatureIsolatedSingleOutput

SCH2309

P-ChannelSiliconMOSFETGeneral-PurposeSwitchingDeviceApplications

SI2309A

SOT-23-3LPlastic-EncapsulateMOSFETS

Features VDS(V)=-60V ID=-1.25A(VGS=-10V) RDS(ON)

SI2309A

SOT-23-3LPlastic-EncapsulateMOSFETS

Features VDS(V)=-60V ID=-1.25A(VGS=-10V) RDS(ON)

SI2309BDS

60VP-ChannelPowerMOSFET

GeneralFeatures ®Vos=60VIo=-16A Rosin)

SI2309CD

P-Channel60-V(D-S)MOSFET

SI2309CDS

P-Channel60-V(D-S)MOSFET