RN2309

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

Switching,InverterCircuit,InterfaceCircuitAndDriverCircuitApplications Withbuilt-inbiasresistors Simplifycircuitdesign Reduceaquantityofpartsandmanufacturingprocess ComplementarytoRN1307~RN1309

RN2309(TE85L,F)

Package：SC-70，SOT-323；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS PNP 50V 0.1A USM

Toshiba Semiconductor and Storage

RN2309,LF

Package：SC-70，SOT-323；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS PNP 50V 0.1A USM

Toshiba Semiconductor and Storage

RN2309,LXHF

Package：SC-70，SOT-323；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：AUTO AEC-Q TR PNP BRT, Q1BSR=47K

Toshiba Semiconductor and Storage

RSZ-2309

1WattSMDMiniatureIsolatedSingleOutput

RSZ-2309HP

1WattSMDMiniatureIsolatedSingleOutput

SCH2309

P-ChannelSiliconMOSFETGeneral-PurposeSwitchingDeviceApplications

SI2309A

SOT-23-3LPlastic-EncapsulateMOSFETS

Features VDS(V)=-60V ID=-1.25A(VGS=-10V) RDS(ON)

SI2309A

SOT-23-3LPlastic-EncapsulateMOSFETS

Features VDS(V)=-60V ID=-1.25A(VGS=-10V) RDS(ON)

SI2309BDS

60VP-ChannelPowerMOSFET

GeneralFeatures ®Vos=60VIo=-16A Rosin)