丝印：S2；Package：SOT-23；N-Channel Enhancement Mode Mosfet

Features TrenchFET Power MOSFET Load Switch for Portable Devices. DC/DC Converter.

文件：345.36 Kbytes 页数：5 Pages

RECTRON

丽正国际

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications ● With built-in bias resistors ● Simplify circuit design ● Reduce a quantity of parts and manufacturing process ● Complementary to RN1301~1306

文件：261.5 Kbytes 页数：7 Pages

TOSHIBA

东芝

20V N-Channel Enhancement Mode MOSFET

Features ◇ Advanced trench process technology ◇ High density cell design for ultra low on-resistance ◇ Excellent thermal and electrical capabilities ◇ Compact and low profile SOT-23 package

文件：187.22 Kbytes 页数：4 Pages

SIRECT

矽莱克半导体

20V N-Channel Enhancement Mode MOSFET

Features ◇ Advanced trench process technology ◇ High density cell design for ultra low on-resistance ◇ Excellent thermal and electrical capabilities ◇ Compact and low profile SOT-23 package

文件：187.22 Kbytes 页数：4 Pages

SIRECT

矽莱克半导体